There are no models available for this part yet.
Overview of IRFR310 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRFR310 by Samsung Semiconductor
Part Data Attributes for IRFR310 by Samsung Semiconductor
|
|
---|---|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description
|
DPAK-3
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Avalanche Energy Rating (Eas)
|
60 mJ
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
400 V
|
Drain Current-Max (ID)
|
1.7 A
|
Drain-source On Resistance-Max
|
3.6 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSSO-G2
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
25 W
|
Power Dissipation-Max (Abs)
|
25 W
|
Pulsed Drain Current-Max (IDM)
|
3.5 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
49 ns
|
Turn-on Time-Max (ton)
|
27 ns
|
Alternate Parts for IRFR310
This table gives cross-reference parts and alternative options found for IRFR310. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR310, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR310 | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR310 vs IRFR310 |
IRFR310PBF | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR310 vs IRFR310PBF |
IRFR310TRRPBF | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | International Rectifier | IRFR310 vs IRFR310TRRPBF |
SIHFR310 | TRANSISTOR 1.7 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR310 vs SIHFR310 |
IRFR310PBF | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR310 vs IRFR310PBF |
IRFR310TRPBF | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR310 vs IRFR310TRPBF |
IRFR310 | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Fairchild Semiconductor Corporation | IRFR310 vs IRFR310 |
IRFR310TRLPBF | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR310 vs IRFR310TRLPBF |
IRFR310TRR | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR310 vs IRFR310TRR |
IRFR310PBF | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR310 vs IRFR310PBF |
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