Part Details for IRFR3709ZTRPBF by Infineon Technologies AG
Overview of IRFR3709ZTRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRFR3709ZTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9135
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Newark | Mosfet, N-Ch, 30V, 86A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:86A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0052Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Rohs Compliant: Yes |Infineon IRFR3709ZTRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 248 |
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$0.4530 / $0.9520 | Buy Now |
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DISTI #
IRFR3709ZPBFCT-ND
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DigiKey | MOSFET N-CH 30V 86A DPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9116 In Stock |
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$0.3251 / $0.8700 | Buy Now |
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DISTI #
IRFR3709ZTRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 86A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3709ZTRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.2920 / $0.3569 | Buy Now |
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DISTI #
942-IRFR3709ZTRPBF
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Mouser Electronics | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC RoHS: Compliant | 600 |
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$0.3240 / $0.7900 | Buy Now |
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Future Electronics | Single N-Channel 30 V 6.5 mOhm 17 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.3200 / $0.3400 | Buy Now |
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Future Electronics | Single N-Channel 30 V 6.5 mOhm 17 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.3200 / $0.3400 | Buy Now |
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Future Electronics | Single N-Channel 30 V 6.5 mOhm 17 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.3200 / $0.3400 | Buy Now |
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Bristol Electronics | 1819 |
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RFQ | ||
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Quest Components | 30 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 1455 |
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$0.3750 / $0.9375 | Buy Now |
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DISTI #
IRFR3709ZTRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 86A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3709ZTRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.2920 / $0.3569 | Buy Now |
Part Details for IRFR3709ZTRPBF
IRFR3709ZTRPBF CAD Models
IRFR3709ZTRPBF Part Data Attributes
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IRFR3709ZTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR3709ZTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR3709ZTRPBF
This table gives cross-reference parts and alternative options found for IRFR3709ZTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3709ZTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR3709ZTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3709ZTRPBF vs IRFR3709ZTRLPBF |
| IRFR3709ZCPBF | Power Field-Effect Transistor, 86A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR3709ZTRPBF vs IRFR3709ZCPBF |
| IRFR3709Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRPBF vs IRFR3709Z |
| IRFR3709ZPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3709ZTRPBF vs IRFR3709ZPBF |
| IRFR3709ZTR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRPBF vs IRFR3709ZTR |
| IRFR3709ZPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRPBF vs IRFR3709ZPBF |
| IRFR3709ZTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRPBF vs IRFR3709ZTRLPBF |
| IRFR3709ZTRRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRPBF vs IRFR3709ZTRRPBF |
| IRFR3709Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3709ZTRPBF vs IRFR3709Z |
| IRFR3709ZTRL | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRPBF vs IRFR3709ZTRL |