Part Details for IRFR3709ZTRRPBF by Infineon Technologies AG
Overview of IRFR3709ZTRRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRFR3709ZTRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IRFR3709 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 3000 |
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$0.4157 / $0.4891 | Buy Now |
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DISTI #
IRFR3709ZTRRPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 86A, 79W, DPAK Min Qty: 3000 | 0 |
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$0.5240 | RFQ |
Part Details for IRFR3709ZTRRPBF
IRFR3709ZTRRPBF CAD Models
IRFR3709ZTRRPBF Part Data Attributes
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IRFR3709ZTRRPBF
Infineon Technologies AG
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Datasheet
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IRFR3709ZTRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR3709ZTRRPBF
This table gives cross-reference parts and alternative options found for IRFR3709ZTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3709ZTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR3709ZTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3709ZTRRPBF vs IRFR3709ZTRLPBF |
| IRFR3709ZCPBF | Power Field-Effect Transistor, 86A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR3709ZTRRPBF vs IRFR3709ZCPBF |
| IRFR3709Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRRPBF vs IRFR3709Z |
| IRFR3709ZPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3709ZTRRPBF vs IRFR3709ZPBF |
| IRFR3709ZTR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRRPBF vs IRFR3709ZTR |
| IRFR3709ZPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRRPBF vs IRFR3709ZPBF |
| IRFR3709ZTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRRPBF vs IRFR3709ZTRLPBF |
| IRFR3709ZTRRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRRPBF vs IRFR3709ZTRRPBF |
| IRFR3709Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3709ZTRRPBF vs IRFR3709Z |
| IRFR3709ZTRL | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3709ZTRRPBF vs IRFR3709ZTRL |