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Part Details for IRFR5305TRPBF by Infineon Technologies AG
Overview of IRFR5305TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for IRFR5305TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
48W3427
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Newark | Mosfet Transistor, P Channel, 31 A, 55 V, 65 Mohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRFR5305TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 110308 |
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$0.6610 / $1.4100 | Buy Now |
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DISTI #
26AC0550
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Newark | Planar_Mosfets Rohs Compliant: Yes |Infineon IRFR5305TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4410 / $0.5390 | Buy Now |
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DISTI #
IRFR5305PBFCT-ND
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DigiKey | MOSFET P-CH 55V 31A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
7853 In Stock |
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$0.4909 / $1.3100 | Buy Now |
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DISTI #
IRFR5305TRPBF
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Avnet Americas | Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR5305TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 10000 |
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$0.4410 / $0.5391 | Buy Now |
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DISTI #
IRFR5305TRPBF
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Avnet Americas | Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR5305TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4574 / $0.5554 | Buy Now |
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DISTI #
942-IRFR5305TRPBF
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Mouser Electronics | MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC RoHS: Compliant | 34220 |
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$0.4900 / $1.1900 | Buy Now |
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DISTI #
70017406
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RS | MOSFET, Power, P-Ch, VDSS -55V, RDS(ON) 0.065Ohm, ID -31A, D-Pak (TO-252AA),PD 110W | Infineon IRFR5305TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.8300 / $0.9700 | RFQ |
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Future Electronics | Single P-Channel 55V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 754000Reel |
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$0.4800 / $0.5150 | Buy Now |
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Future Electronics | Single P-Channel 55V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 80000Reel |
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$0.4800 / $0.5150 | Buy Now |
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Bristol Electronics | 70666 |
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RFQ |
Part Details for IRFR5305TRPBF
IRFR5305TRPBF CAD Models
IRFR5305TRPBF Part Data Attributes
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IRFR5305TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR5305TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR5305TRPBF
This table gives cross-reference parts and alternative options found for IRFR5305TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR5305TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR5305 | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR5305TRPBF vs IRFR5305 |
| AUIRFR5305TR | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR5305TRPBF vs AUIRFR5305TR |
| IRFR5305TRPBF | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR5305TRPBF vs IRFR5305TRPBF |
| AUIRFR5305 | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 | Infineon Technologies AG | IRFR5305TRPBF vs AUIRFR5305 |
| IRFR5305TRRPBF | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR5305TRPBF vs IRFR5305TRRPBF |
| IRFR5305PBF | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR5305TRPBF vs IRFR5305PBF |
| IRFR5305TRR | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR5305TRPBF vs IRFR5305TRR |
| IRFR5305TRL | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR5305TRPBF vs IRFR5305TRL |
| IRFR5305TR | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR5305TRPBF vs IRFR5305TR |
| IRFR5305PBF | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR5305TRPBF vs IRFR5305PBF |