Datasheets
IRFS3004TRLPBF by:
Infineon Technologies AG

Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRFS3004TRLPBF by Infineon Technologies AG

Results Overview of IRFS3004TRLPBF by Infineon Technologies AG

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IRFS3004TRLPBF Information

IRFS3004TRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFS3004TRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 34AC1755
Newark Mosfet, N-Ch, 40V, 195A, 175Deg C, 380W, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:195A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFS3004TRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 409
  • 1 $2.3500
  • 10 $2.1500
  • 25 $2.1500
  • 50 $1.9900
  • 100 $1.9900
  • 250 $1.9900
  • 500 $1.8500
  • 1,600 $1.7200
$1.7200 / $2.3500 Buy Now
DISTI # 34AC1755
Avnet Americas Trans MOSFET N-CH 40V 340A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 34AC1755) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack 409 Partner Stock
  • 1 $3.5000
  • 10 $2.9800
  • 25 $2.8500
  • 50 $2.5000
  • 100 $2.1500
$2.1500 / $3.5000 Buy Now
DISTI # IRFS3004TRLPBF
Avnet Americas Trans MOSFET N-CH 40V 340A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS3004TRLPBF) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 0
RFQ
DISTI # 70019740
RS IRFS3004TRLPBF N-CHANNEL MOSFET TRANSISTOR, 340 A, 40 V, 3+TAB-PIN D2PAK Min Qty: 4 Package Multiple: 1 Container: Bulk 0
  • 4 $5.8600
$5.8600 RFQ
Bristol Electronics   3
RFQ
Rochester Electronics Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 43
  • 25 $1.9300
  • 100 $1.8300
  • 500 $1.7400
  • 1,000 $1.6400
  • 10,000 $1.5400
$1.5400 / $1.9300 Buy Now
LCSC 40V 340A 380W 1.4m10V195A 4V 1 N-Channel D2PAK Single FETs MOSFETs RoHS 4
  • 1 $2.0383
$2.0383 Buy Now

Part Details for IRFS3004TRLPBF

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IRFS3004TRLPBF Part Data Attributes

IRFS3004TRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFS3004TRLPBF Infineon Technologies AG Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Package Description D2pak-3/2
Reach Compliance Code Not Compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 300 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 195 A
Drain-source On Resistance-Max 0.00175 Ω
FET Technology Metal-Oxide Semiconductor
Feedback Cap-Max (Crss) 1340 Pf
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode Enhancement Mode
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 380 W
Pulsed Drain Current-Max (IDM) 1310 A
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Matte Tin (Sn) - With Nickel (Ni) Barrier
Terminal Form Gull Wing
Terminal Position Single
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for IRFS3004TRLPBF

This table gives cross-reference parts and alternative options found for IRFS3004TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS3004TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRFS3004TRR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRFS3004TRLPBF vs AUIRFS3004TRR
Part Number Manufacturer Composite Price Description Compare
IRFS3004TRL Infineon Technologies AG Check for Price Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRFS3004TRLPBF vs IRFS3004TRL
IRFS3004TRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRFS3004TRLPBF vs IRFS3004TRRPBF
IRFS3004 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRFS3004TRLPBF vs IRFS3004
AUIRFS3004TRL Infineon Technologies AG Check for Price Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRFS3004TRLPBF vs AUIRFS3004TRL
IRFS3004TRR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRFS3004TRLPBF vs IRFS3004TRR
equivalents icon

IRFS3004TRLPBF Related Parts

IRFS3004TRLPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFS3004TRLPBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended operating conditions.

  • Use a multi-layer PCB with a solid ground plane, keep the power and ground traces short and wide, and use shielding or a Faraday cage to minimize EMI.

  • Yes, the IRFS3004TRLPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and oscillations.

  • Use a voltage regulator or a transient voltage suppressor (TVS) to protect against overvoltage, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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