There are no models available for this part yet.
Overview of IRFU120 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 5 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRFU120 by Samsung Semiconductor
Part Data Attributes for IRFU120 by Samsung Semiconductor
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description
|
IN-LINE, R-PSIP-T3
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Avalanche Energy Rating (Eas)
|
30 mJ
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
8.4 A
|
Drain-source On Resistance-Max
|
0.27 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSIP-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
42 W
|
Power Dissipation-Max (Abs)
|
42 W
|
Pulsed Drain Current-Max (IDM)
|
34 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
59 ns
|
Turn-on Time-Max (ton)
|
58 ns
|
Alternate Parts for IRFU120
This table gives cross-reference parts and alternative options found for IRFU120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFU120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Fairchild Semiconductor Corporation | IRFU120 vs IRFU120 |
SIHFU120-E3 | TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3, FET General Purpose Power | Vishay Siliconix | IRFU120 vs SIHFU120-E3 |
IRFU120PBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | Vishay Intertechnologies | IRFU120 vs IRFU120PBF |
IRFU120 | 8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | IRFU120 vs IRFU120 |
IRFU120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | International Rectifier | IRFU120 vs IRFU120 |
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