Part Details for IRFU120PBF by Vishay Intertechnologies
Overview of IRFU120PBF by Vishay Intertechnologies
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFU120PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
78Y9477
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Newark | Mosfet, N, 100V, 7.7A, I-Pak, Transistor Polarity:N Channel, Continuous Drain Current Id:7.7A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.27Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Vishay IRFU120PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 400 |
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$0.0860 | Buy Now |
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DISTI #
78Y9477
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Avnet Americas | MOSFET N-CHANNEL 100V - Bulk (Alt: 78Y9477) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Bulk | 400 Partner Stock |
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$0.6510 / $0.9980 | Buy Now |
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DISTI #
844-IRFU120PBF
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Mouser Electronics | MOSFETs TO251 100V 7.7A N-CH MOSFET RoHS: Compliant | 4203 |
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$0.5180 / $0.8200 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251) RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 3965Tube |
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$0.3950 / $0.4800 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251) RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.3950 / $0.4800 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251) RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.3950 / $0.4700 | Buy Now |
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DISTI #
IRFU120PBF
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TTI | MOSFETs TO251 100V 7.7A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Tube |
Americas - 3000 In Stock |
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$0.3810 | Buy Now |
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DISTI #
IRFU120PBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 4.9A, 42W, IPAK,TO251 Min Qty: 1 | 1279 |
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$0.4380 / $0.9710 | Buy Now |
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Chip 1 Exchange | INSTOCK | 3900 |
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RFQ | |
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DISTI #
IRFU120PBF
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Avnet Asia | MOSFET N-CHANNEL 100V (Alt: IRFU120PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | 0 |
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RFQ |
Part Details for IRFU120PBF
IRFU120PBF CAD Models
IRFU120PBF Part Data Attributes
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IRFU120PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFU120PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks, 4 Days | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 7.7 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 34 pF | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 31 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFU120PBF
This table gives cross-reference parts and alternative options found for IRFU120PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU120PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFU120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Fairchild Semiconductor Corporation | IRFU120PBF vs IRFU120 |
| SIHFU120-E3 | TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3, FET General Purpose Power | Vishay Siliconix | IRFU120PBF vs SIHFU120-E3 |
| IRFU120 | 8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | IRFU120PBF vs IRFU120 |
| IRFU120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | Samsung Semiconductor | IRFU120PBF vs IRFU120 |
| IRFU120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | International Rectifier | IRFU120PBF vs IRFU120 |