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Transistors Power Field-Effect Transistors IRFU120PBF

Transistors
IRFU120PBF
Description: Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3

Overview of IRFU120PBF by Vishay Siliconix

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Price & Stock for IRFU120PBF by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # IRFU120PBF-ND
DigiKey MOSFET N-CH 100V 7.7A TO251AA Min Qty: 1 Lead time: 15 Weeks Container: Tube 305
In Stock
  • 1 $1.0200
  • 75 $0.8188
  • 150 $0.6488
  • 525 $0.5499
  • 1,050 $0.4480
  • 2,025 $0.4217
  • 5,025 $0.4017
  • 10,050 $0.3831
$0.3831 / $1.0200 Buy Now
Quest Components 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 49
  • 1 $0.8100
  • 7 $0.6750
  • 23 $0.4860
$0.4860 / $0.8100 Buy Now
ComSIT USA Power MOSFET Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant Stock EU - 1725
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

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Part Data Attributes for IRFU120PBF by Vishay Siliconix
Parametric Data

IRFU120PBF
Vishay Siliconix
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
TO-251AA
Package Description
ROHS COMPLIANT, PLASTIC, IPAK-3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
210 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
7.7 A
Drain-source On Resistance-Max
0.27 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251AA
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
31 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFU120PBF
    Vishay Siliconix
    Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3
    VS

Alternate Parts for IRFU120PBF

This table gives cross-reference parts and alternative options found for IRFU120PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU120PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFU120 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Fairchild Semiconductor Corporation IRFU120PBF vs IRFU120
SIHFU120-E3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3, FET General Purpose Power Vishay Siliconix IRFU120PBF vs SIHFU120-E3
IRFU120PBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Vishay Intertechnologies IRFU120PBF vs IRFU120PBF
IRFU120 8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation IRFU120PBF vs IRFU120
IRFU120 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 Samsung Semiconductor IRFU120PBF vs IRFU120
IRFU120 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA International Rectifier IRFU120PBF vs IRFU120
Part Number Description Manufacturer Compare
IRFU120 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Fairchild Semiconductor Corporation IRFU120PBF vs IRFU120
IRFU120 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 Samsung Semiconductor IRFU120PBF vs IRFU120
IRFU120PBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Vishay Intertechnologies IRFU120PBF vs IRFU120PBF
SIHFU120-E3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3, FET General Purpose Power Vishay Siliconix IRFU120PBF vs SIHFU120-E3
IRFU120 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA International Rectifier IRFU120PBF vs IRFU120

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