There are no models available for this part yet.
Overview of IRFY9130CSCS by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRFY9130CSCS by International Rectifier
Part Data Attributes for IRFY9130CSCS by International Rectifier
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|---|---|
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Pbfree Code
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No
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Rohs Code
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No
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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INTERNATIONAL RECTIFIER CORP
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Package Description
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FLANGE MOUNT, S-MSFM-P3
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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9.3 A
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Drain-source On Resistance-Max
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0.31 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-257AB
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JESD-30 Code
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S-MSFM-P3
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JESD-609 Code
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e0
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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METAL
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Package Shape
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SQUARE
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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P-CHANNEL
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Finish
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TIN LEAD
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Terminal Form
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PIN/PEG
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Terminal Position
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SINGLE
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Transistor Element Material
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SILICON
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Alternate Parts for IRFY9130CSCS
This table gives cross-reference parts and alternative options found for IRFY9130CSCS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY9130CSCS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFY9130MEB | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, | Infineon Technologies AG | IRFY9130CSCS vs IRFY9130MEB |
| IRFY9130EB | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, | Infineon Technologies AG | IRFY9130CSCS vs IRFY9130EB |
| IRFY9130CSCV | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB | International Rectifier | IRFY9130CSCS vs IRFY9130CSCV |
| IRFY9130MEBPBF | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB | International Rectifier | IRFY9130CSCS vs IRFY9130MEBPBF |
| IRFY9130E | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB | International Rectifier | IRFY9130CSCS vs IRFY9130E |
| IRFY9130-QR-EB | 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFY9130CSCS vs IRFY9130-QR-EB |
| IRFY9130EC | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB | International Rectifier | IRFY9130CSCS vs IRFY9130EC |
| IRFY9130EAPBF | 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB | Infineon Technologies AG | IRFY9130CSCS vs IRFY9130EAPBF |
| IRFY9130MECPBF | 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB | Infineon Technologies AG | IRFY9130CSCS vs IRFY9130MECPBF |
| IRFY9130MEC | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB | International Rectifier | IRFY9130CSCS vs IRFY9130MEC |