Datasheets
IRFY9130MEBPBF by:

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

Part Details for IRFY9130MEBPBF by International Rectifier

Overview of IRFY9130MEBPBF by International Rectifier

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Part Details for IRFY9130MEBPBF

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IRFY9130MEBPBF Part Data Attributes

IRFY9130MEBPBF International Rectifier
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IRFY9130MEBPBF International Rectifier Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9.3 A
Drain-source On Resistance-Max 0.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-257AB
JESD-30 Code S-MSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 45 W
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status Not Qualified
Reference Standard CECC
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 280 ns
Turn-on Time-Max (ton) 200 ns

Alternate Parts for IRFY9130MEBPBF

This table gives cross-reference parts and alternative options found for IRFY9130MEBPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY9130MEBPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFY9130MEBPBF 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY9130MEBPBF vs IRFY9130MEBPBF
Part Number Description Manufacturer Compare
IRFY9130M-QR-BR1 11.2A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFY9130MEBPBF vs IRFY9130M-QR-BR1
IRFY9130-JQR-B Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Resistors IRFY9130MEBPBF vs IRFY9130-JQR-B
IRFY9130ME Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9130MEBPBF vs IRFY9130ME
IRFY9130E Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9130MEBPBF vs IRFY9130E
IRFY9130ECPBF Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9130MEBPBF vs IRFY9130ECPBF
IRFY9130 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFY9130MEBPBF vs IRFY9130
IRFY9130M 11.2A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFY9130MEBPBF vs IRFY9130M
IRFY9130C-JQR-B Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, TO-220MC, 3 PIN TT Electronics Resistors IRFY9130MEBPBF vs IRFY9130C-JQR-B
IRFY9130EAPBF Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9130MEBPBF vs IRFY9130EAPBF
IRFY9130MEA Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9130MEBPBF vs IRFY9130MEA

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