Part Details for IRFY9130EAPBF by International Rectifier
Overview of IRFY9130EAPBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFY9130EAPBF
IRFY9130EAPBF CAD Models
IRFY9130EAPBF Part Data Attributes
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IRFY9130EAPBF
International Rectifier
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Datasheet
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IRFY9130EAPBF
International Rectifier
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | FLANGE MOUNT, S-MSFM-P3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 9.3 A | |
Drain-source On Resistance-Max | 0.36 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-257AB | |
JESD-30 Code | S-MSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 45 W | |
Pulsed Drain Current-Max (IDM) | 37 A | |
Qualification Status | Not Qualified | |
Reference Standard | CECC | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 280 ns | |
Turn-on Time-Max (ton) | 200 ns |
Alternate Parts for IRFY9130EAPBF
This table gives cross-reference parts and alternative options found for IRFY9130EAPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY9130EAPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFY9130EAPBF | 9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB | Infineon Technologies AG | IRFY9130EAPBF vs IRFY9130EAPBF |
IRFY9130EA | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB | International Rectifier | IRFY9130EAPBF vs IRFY9130EA |