Transistors
IRG4BC30W-S
Description: Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

Overview of IRG4BC30W-S by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Energy and Power Systems Electronic Manufacturing

Available Datasheets

Part # Manufacturer Description Datasheet
74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85
74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85
74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85

Price & Stock for IRG4BC30W-S by International Rectifier

Part # Manufacturer Description Stock Price Buy
Quest Components 23 A, 600 V, N-CHANNEL IGBT 200
  • 1 $2.2500
  • 43 $1.3500
  • 112 $1.2150
$1.2150 / $2.2500 Buy Now
Quest Components 23 A, 600 V, N-CHANNEL IGBT 171
  • 1 $4.9800
  • 22 $3.3200
  • 76 $3.0710
$3.0710 / $4.9800 Buy Now

CAD Models for IRG4BC30W-S by International Rectifier
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Part Data Attributes for IRG4BC30W-S by International Rectifier

IRG4BC30W-S
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
23 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE
Fall Time-Max (tf)
100 ns
Gate-Emitter Thr Voltage-Max
6 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
225
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
100 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
300 ns
Turn-on Time-Nom (ton)
41 ns
Want to compare parts?
  1. IRG4BC30W-S
    International Rectifier
    Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
    VS

Alternate Parts for IRG4BC30W-S

This table gives cross-reference parts and alternative options found for IRG4BC30W-S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC30W-S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRG4BC30W-SPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-S vs IRG4BC30W-SPBF
IRG4BC30W-STRL Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-S vs IRG4BC30W-STRL
IRG4BC30W-STRLPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-S vs IRG4BC30W-STRLPBF
IRG4BC30W-STRR Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-S vs IRG4BC30W-STRR
Part Number Description Manufacturer Compare
IRG4BC30W-STRL Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-S vs IRG4BC30W-STRL
IRG4BC30W-STRR Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-S vs IRG4BC30W-STRR
IRG4BC30W-S Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC30W-S vs IRG4BC30W-S
IRG4BC30W-SPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG4BC30W-S vs IRG4BC30W-SPBF

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