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IRG4BC40WPBF by:

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRG4BC40WPBF by International Rectifier

Overview of IRG4BC40WPBF by International Rectifier

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Part Details for IRG4BC40WPBF

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IRG4BC40WPBF Part Data Attributes

IRG4BC40WPBF International Rectifier
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IRG4BC40WPBF International Rectifier Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 110 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 174 ns
Turn-on Time-Nom (ton) 49 ns

Alternate Parts for IRG4BC40WPBF

This table gives cross-reference parts and alternative options found for IRG4BC40WPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC40WPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4BC40W Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC40WPBF vs IRG4BC40W
Part Number Description Manufacturer Compare
HGTP7N60A4D 34A, 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation IRG4BC40WPBF vs HGTP7N60A4D
HGTG20N120CN 20A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation IRG4BC40WPBF vs HGTG20N120CN
SKW15N60FKSA1 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IRG4BC40WPBF vs SKW15N60FKSA1
IRG4BC10KDPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRG4BC40WPBF vs IRG4BC10KDPBF
HGT1S11N120CNS 43A, 1200V, N-CHANNEL IGBT, TO-263AB Intersil Corporation IRG4BC40WPBF vs HGT1S11N120CNS
HGT1S12N60B3S 27A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 Intersil Corporation IRG4BC40WPBF vs HGT1S12N60B3S
HGTG30N60B3D Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation IRG4BC40WPBF vs HGTG30N60B3D
HGTP3N60C3D 6A, 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation IRG4BC40WPBF vs HGTP3N60C3D
SGP04N60 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens IRG4BC40WPBF vs SGP04N60
HGTG30N60A4D Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation IRG4BC40WPBF vs HGTG30N60A4D

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