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| Manufacturer | Description | Price Range | Set Alert | Details |
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| Rochester Electronics LLC | MOSFET N-CH 500V 8.8A TO247-3 | $3.3800 |
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| Vishay Intertechnologies | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC |
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| Harris Semiconductor | IRFP440 | $2.1600 / $4.0230 |
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| International Rectifier | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | $1.9050 / $9.7200 |
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| New Jersey Semiconductor Products Inc | Power Field-Effect Transistor, 8.8A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | $3.2970 / $9.4200 |
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | $2.5400 / $3.8100 |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, 8.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Texas Instruments | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,8.8A I(D),TO-247AC |
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| National Semiconductor Corporation | Power Field-Effect Transistor, 8.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Samsung Semiconductor | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Intersil Corporation | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 |
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| Vishay Siliconix | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 |
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| FCI Semiconductor | Power Field-Effect Transistor, 8.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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