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Transistors IGBTs IRG4PC50KPBF

IRG4PC50KPBF
Description: Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3

Overview of IRG4PC50KPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Electronic Manufacturing

Price & Stock for IRG4PC50KPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IRG4PC50KPBF
Avnet Americas Trans IGBT Chip N-CH 600V 52A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PC50KPBF) RoHS: Compliant Min Qty: 161 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 178 Partner Stock
  • 161 $2.2308
  • 170 $2.1996
  • 330 $2.1840
  • 810 $2.1216
  • 1,700 $2.0748
  • 8,100 $2.0124
  • 17,000 $1.9812
$1.9812 / $2.2308 Buy Now
DISTI # 70018459
RS 600V ULTRAFAST 8-25 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50KPBF RoHS: Not Compliant Min Qty: 150 Package Multiple: 1 Container: Bulk 0
  • 150 $3.7300
  • 750 $3.5400
  • 1,500 $3.3600
  • 3,000 $3.1700
  • 15,000 $2.9900
$2.9900 / $3.7300 RFQ

CAD Models for IRG4PC50KPBF by Infineon Technologies AG
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Part Data Attributes for IRG4PC50KPBF by Infineon Technologies AG
Parametric Data

IRG4PC50KPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
LEAD FREE, PLASTIC PACKAGE-3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
52 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE
Fall Time-Max (tf)
120 ns
Gate-Emitter Thr Voltage-Max
6 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-247AC
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
200 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
430 ns
Turn-on Time-Nom (ton)
72 ns
Want to compare parts?
  1. IRG4PC50KPBF
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
    VS

Alternate Parts for IRG4PC50KPBF

This table gives cross-reference parts and alternative options found for IRG4PC50KPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC50KPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
GT50J102 TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, LEAD FREE, 2-21F2C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4PC50KPBF vs GT50J102
IRG4BC30KDPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRG4PC50KPBF vs IRG4BC30KDPBF
HGTP12N60C3D 600V, UFS IGBT, 800-TUBE onsemi IRG4PC50KPBF vs HGTP12N60C3D
IGB20N60H3ATMA1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IRG4PC50KPBF vs IGB20N60H3ATMA1
HGTG10N120BND 1200V, NPT IGBT, 450-TUBE onsemi IRG4PC50KPBF vs HGTG10N120BND
IKW08T120FKSA1 Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG IRG4PC50KPBF vs IKW08T120FKSA1
MGW12N120 20A, 1200V, N-CHANNEL IGBT, TO-247AE, CASE 340K-01, 3 PIN onsemi IRG4PC50KPBF vs MGW12N120
HGTG11N120CND 1200V, NPT IGBT, 450-TUBE onsemi IRG4PC50KPBF vs HGTG11N120CND
HGTG30N60B3 IGBT, 600V, PT, 450-TUBE onsemi IRG4PC50KPBF vs HGTG30N60B3
IRG4BC30SPBF Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRG4PC50KPBF vs IRG4BC30SPBF

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