Datasheets
IRG4PH30KPBF by:
Infineon Technologies AG

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3

Part Details for IRG4PH30KPBF by Infineon Technologies AG

Results Overview of IRG4PH30KPBF by Infineon Technologies AG

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

IRG4PH30KPBF Information

IRG4PH30KPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRG4PH30KPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7542
Newark Single Igbt, 1.2Kv, 20A, Continuous Collector Current:20A, Collector Emitter Saturation Voltage:4.2V, Power Dissipation:100W, Collector Emitter Voltage Max:1.2Kv, No. Of Pins:3Pins, Operating Temperature Max:150°C, Msl:- Rohs Compliant: Yes |Infineon IRG4PH30KPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 70017609
RS 1200V ULTRAFAST 4-20 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $5.1100
  • 5 $4.8800
  • 10 $4.5900
  • 20 $4.3500
  • 100 $4.1000
$4.1000 / $5.1100 RFQ
Chip Stock TransIGBTChipN-CH1200V20A100000mW3-Pin(3+Tab)TO-247ACTube 470
RFQ

Part Details for IRG4PH30KPBF

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IRG4PH30KPBF Part Data Attributes

IRG4PH30KPBF Infineon Technologies AG
Buy Now Datasheet
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IRG4PH30KPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Package Description Lead Free Package-3
Reach Compliance Code Compliant
ECCN Code EAR99
Additional Feature Low Conduction Loss
Case Connection Collector
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 1200 V
Configuration Single
Fall Time-Max (tf) 170 Ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 42 W
Qualification Status Not Qualified
Surface Mount No
Terminal Finish Matte Tin Over Nickel
Terminal Form Through-Hole
Terminal Position Single
Transistor Application Motor Control
Transistor Element Material Silicon
Turn-off Time-Nom (toff) 640 Ns
Turn-on Time-Nom (ton) 53 Ns

Alternate Parts for IRG4PH30KPBF

This table gives cross-reference parts and alternative options found for IRG4PH30KPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PH30KPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRG4PH30KPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 IRG4PH30KPBF vs IRG4PH30KPBF
Part Number Manufacturer Composite Price Description Compare
IRGBC30FD2 International Rectifier Check for Price Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN IRG4PH30KPBF vs IRGBC30FD2
GT15H101 Toshiba America Electronic Components Check for Price TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor IRG4PH30KPBF vs GT15H101
IRG4BC40W Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN IRG4PH30KPBF vs IRG4BC40W
APT30GS60BRDQ2(G) Microsemi Corporation (now Microchip) Check for Price Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT PACKAGE-3 IRG4PH30KPBF vs APT30GS60BRDQ2(G)
HGTP12N60C3 Fairchild Semiconductor Corporation Check for Price Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, IRG4PH30KPBF vs HGTP12N60C3
HGTG15N120C3 Harris Semiconductor Check for Price Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247 IRG4PH30KPBF vs HGTG15N120C3
IXEH40N120D1 IXYS Corporation Check for Price Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3 IRG4PH30KPBF vs IXEH40N120D1
IRGP440UD2 International Rectifier Check for Price Insulated Gate Bipolar Transistor, 40A I(C), 500V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN IRG4PH30KPBF vs IRGP440UD2
IXGA10N60A IXYS Corporation Check for Price Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN IRG4PH30KPBF vs IXGA10N60A
IXGH28N90B Littelfuse Inc Check for Price Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IRG4PH30KPBF vs IXGH28N90B
equivalents icon

IRG4PH30KPBF Related Parts

IRG4PH30KPBF Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the IRG4PH30KPBF can withstand is 175°C.

  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a suitable heat sink, and ensure proper thermal management.

  • The recommended gate resistance for the IRG4PH30KPBF is between 10 ohms and 100 ohms.

  • Yes, the IRG4PH30KPBF is suitable for high-frequency applications up to 100 kHz, but it's recommended to consult the datasheet and application notes for specific guidance.

  • To protect the IRG4PH30KPBF from ESD, it is recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design.

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