Part Details for IRGS10B60KDPBF by Infineon Technologies AG
Overview of IRGS10B60KDPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRGS10B60KDPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Sense Electronic Company Limited | TO-263 | 12170 |
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RFQ |
Part Details for IRGS10B60KDPBF
IRGS10B60KDPBF CAD Models
IRGS10B60KDPBF Part Data Attributes
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IRGS10B60KDPBF
Infineon Technologies AG
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Datasheet
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IRGS10B60KDPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 22 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 34 ns | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 28 ns | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 276 ns | |
| Turn-on Time-Nom (ton) | 50 ns |
Alternate Parts for IRGS10B60KDPBF
This table gives cross-reference parts and alternative options found for IRGS10B60KDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGS10B60KDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRGS4B60KPBF | Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRGS10B60KDPBF vs IRGS4B60KPBF |
| IRGS6B60KDTRR | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | IRGS10B60KDPBF vs IRGS6B60KDTRR |
| IRGS4B60KD1TRL | Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | IRGS10B60KDPBF vs IRGS4B60KD1TRL |
| IRGS4B60KD1TRRPBF | Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRGS10B60KDPBF vs IRGS4B60KD1TRRPBF |
| IRGS10B60KDTRRPBF | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRGS10B60KDPBF vs IRGS10B60KDTRRPBF |
| IRGS6B60KDTRL | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | IRGS10B60KDPBF vs IRGS6B60KDTRL |
| IRGS6B60KDPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRGS10B60KDPBF vs IRGS6B60KDPBF |
| IRGS6B60KDTRRPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRGS10B60KDPBF vs IRGS6B60KDTRRPBF |
| IRGS6B60KD | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | IRGS10B60KDPBF vs IRGS6B60KD |
| IRGS4B60KD1TRR | Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | IRGS10B60KDPBF vs IRGS4B60KD1TRR |