There are no models available for this part yet.
Overview of IRHM8160PBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 7 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 6 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Environmental Monitoring
Industrial Automation
Automotive
CAD Models for IRHM8160PBF by International Rectifier
Part Data Attributes for IRHM8160PBF by International Rectifier
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code
|
TO-254AA
|
Package Description
|
FLANGE MOUNT, R-CSFM-T3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Additional Feature
|
RADIATION HARDENED
|
Avalanche Energy Rating (Eas)
|
500 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
35 A
|
Drain-source On Resistance-Max
|
0.045 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-254AA
|
JESD-30 Code
|
R-CSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
250 W
|
Pulsed Drain Current-Max (IDM)
|
201 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
40
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRHM8160PBF
This table gives cross-reference parts and alternative options found for IRHM8160PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHM8160PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRHM8160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Infineon Technologies AG | IRHM8160PBF vs IRHM8160 |
IRHM7160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Infineon Technologies AG | IRHM8160PBF vs IRHM7160 |
IRHM7160PBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | IRHM8160PBF vs IRHM7160PBF |
IRHM7160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | IRHM8160PBF vs IRHM7160 |
JANSR2N7432 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRHM8160PBF vs JANSR2N7432 |
JANSH2N7432 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRHM8160PBF vs JANSH2N7432 |
IRHM8160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | IRHM8160PBF vs IRHM8160 |