Datasheets
IRHNA7064PBF by:

Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN

Part Details for IRHNA7064PBF by International Rectifier

Overview of IRHNA7064PBF by International Rectifier

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for IRHNA7064PBF

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IRHNA7064PBF Part Data Attributes

IRHNA7064PBF International Rectifier
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IRHNA7064PBF International Rectifier Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description CHIP CARRIER, R-CBCC-N3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 300 W
Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRHNA7064PBF

This table gives cross-reference parts and alternative options found for IRHNA7064PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHNA7064PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRHNA7064 Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN International Rectifier IRHNA7064PBF vs IRHNA7064
IRHNA8064PBF Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN International Rectifier IRHNA7064PBF vs IRHNA8064PBF
Part Number Description Manufacturer Compare
JANSR2N7431U Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN Infineon Technologies AG IRHNA7064PBF vs JANSR2N7431U
IRHNA8064PBF Power Field-Effect Transistor, 75A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PIN International Rectifier IRHNA7064PBF vs IRHNA8064PBF

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