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Power Field-Effect Transistor, 8.1A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K2973
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Newark | Mosfet Transistor, N Channel, 7.7 A, 100 V, 180 Mohm, 10 V, 2 V Rohs Compliant: Yes |Infineon IRLI520NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
70017097
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.18Ohm, ID 8.1A, TO-220 Full-Pak, PD 30W | Infineon IRLI520NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$0.7800 / $0.9100 | RFQ |
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Rochester Electronics | IRLI520N - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 4334 |
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$0.3567 / $0.4197 | Buy Now |
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IRLI520NPBF
Infineon Technologies AG
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Datasheet
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IRLI520NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 8.1A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Date Of Intro | 1998-01-01 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 85 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 8.1 A | |
Drain-source On Resistance-Max | 0.22 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 35 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLI520NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLI520NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRLI520NPBF | Power Field-Effect Transistor, 8.1A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULLPAK-3 | International Rectifier | IRLI520NPBF vs IRLI520NPBF |