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Part Details for IRLL014NPBF by Infineon Technologies AG
Results Overview of IRLL014NPBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRLL014NPBF Information
IRLL014NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLL014NPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRLL014NPBF-ND
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DigiKey | MOSFET N-CH 55V 2A SOT223 Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
70017100
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RS | MOSFET, POWER, N-CH, VDSS 55V, RDS(ON) 0.14OHM, ID 2.8A, SOT-223,PD 2.1W, VGS +/-16V Min Qty: 2320 Package Multiple: 1 Container: Bulk | 0 |
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$0.6900 | RFQ |
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Chip Stock | Mosfet,Power, N-ch, Vdss55V, Rds(on)0.14Ohm, Id2.8A, SOT-223, Pd2.1W, Vgs+/-16V | 67870 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 55V 2A SOT223 | 30500 |
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$0.1218 / $0.1572 | Buy Now |
Part Details for IRLL014NPBF
IRLL014NPBF CAD Models
IRLL014NPBF Part Data Attributes
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IRLL014NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLL014NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Sot-223, 4 Pin | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 32 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 30 Pf | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRLL014NPBF
This table gives cross-reference parts and alternative options found for IRLL014NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL014NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQT13N06LTF | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | IRLL014NPBF vs FQT13N06LTF |
| FQT13N06TF | Rochester Electronics LLC | Check for Price | 2800mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-223, 4 PIN | IRLL014NPBF vs FQT13N06TF |
IRLL014NPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRLL014NPBF is -40°C to 150°C.
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Yes, the IRLL014NPBF is RoHS (Restriction of Hazardous Substances) compliant, meaning it does not contain hazardous substances like lead, mercury, and cadmium.
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The typical rise time for the IRLL014NPBF is around 10-15 ns.
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Yes, the IRLL014NPBF is suitable for high-frequency applications up to 100 kHz due to its low switching losses and fast switching times.
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The recommended gate resistor value for the IRLL014NPBF is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.