Part Details for IRLL024NPBF by Infineon Technologies AG
Overview of IRLL024NPBF by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLL024NPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IRLL024NPBF-ND
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DigiKey | MOSFET N-CH 55V 3.1A SOT223 Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
70017461
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.065Ohm, ID 4.4A, SOT-223,PD 2.1W, VGS +/-16V | Infineon IRLL024NPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$0.3850 / $0.4820 | RFQ |
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Rochester Electronics | IRLL024N - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 181 |
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$0.2231 / $0.2625 | Buy Now |
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DISTI #
SMC-IRLL024NPBF
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Sensible Micro Corporation | Mosfet, N, 55V, 4.4A, Sot-223 RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 06+ | 124 |
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$0.2720 | RFQ |
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Win Source Electronics | MOSFET N-CH 55V 3.1A SOT223 | 178000 |
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$0.2170 / $0.3250 | Buy Now |
Part Details for IRLL024NPBF
IRLL024NPBF CAD Models
IRLL024NPBF Part Data Attributes:
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IRLL024NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLL024NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLL024NPBF
This table gives cross-reference parts and alternative options found for IRLL024NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL024NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRLL024NTR | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | Infineon Technologies AG | IRLL024NPBF vs AUIRLL024NTR |
| IRLL024NTR | Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | International Rectifier | IRLL024NPBF vs IRLL024NTR |
| AUIRLL024NTR | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | International Rectifier | IRLL024NPBF vs AUIRLL024NTR |
| IRLL024NTRPBF | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRLL024NPBF vs IRLL024NTRPBF |
| IRLL024N | Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | International Rectifier | IRLL024NPBF vs IRLL024N |
| AUIRLL024N | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | International Rectifier | IRLL024NPBF vs AUIRLL024N |
| IRLL024NTR | Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | Infineon Technologies AG | IRLL024NPBF vs IRLL024NTR |
| IRLL024NPBF | Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN | International Rectifier | IRLL024NPBF vs IRLL024NPBF |