Part Details for IRLL110 by International Rectifier
Overview of IRLL110 by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLL110
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 7 | 94 |
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$0.3750 / $0.7500 | Buy Now |
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Bristol Electronics | 160 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-261AA | 675 |
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$0.7250 / $1.4500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-261AA | 75 |
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$0.3000 / $1.0000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-261AA | 128 |
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$0.5250 / $1.0500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-261AA | 444 |
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$0.5000 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-261AA | 54 |
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$1.2760 / $2.3200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-261AA | 40 |
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$1.4500 / $2.3200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-261AA | 418 |
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$1.0730 / $2.3200 | Buy Now |
Part Details for IRLL110
IRLL110 CAD Models
IRLL110 Part Data Attributes
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IRLL110
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLL110
International Rectifier
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1.5 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2 W | |
| Power Dissipation-Max (Abs) | 3.1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLL110
This table gives cross-reference parts and alternative options found for IRLL110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHLL110-GE3 | TRANSISTOR 1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOIC-4, FET General Purpose Power | Vishay Siliconix | IRLL110 vs SIHLL110-GE3 |
| IRLL110 | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | Vishay Intertechnologies | IRLL110 vs IRLL110 |
| IRLL110TRPBF | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | Vishay Intertechnologies | IRLL110 vs IRLL110TRPBF |
| IRLL110PBF | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN | International Rectifier | IRLL110 vs IRLL110PBF |
| IRLL110TRPBF | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN | International Rectifier | IRLL110 vs IRLL110TRPBF |
| IRLL110TR | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | International Rectifier | IRLL110 vs IRLL110TR |