Datasheets
IRLL110 by:

Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN

Part Details for IRLL110 by Vishay Intertechnologies

Overview of IRLL110 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRLL110

Part # Distributor Description Stock Price Buy
DISTI # IRLL110
Avnet Americas TRANS MOSFET N-CH 100V 1.5A 4PIN SOT-223 - Bulk (Alt: IRLL110) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk 0
RFQ
DISTI # IRLL110
Avnet Americas TRANS MOSFET N-CH 100V 1.5A 4PIN SOT-223 - Bulk (Alt: IRLL110) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk 0
RFQ
DISTI # IRLL110
Avnet Americas TRANS MOSFET N-CH 100V 1.5A 4PIN SOT-223 - Bulk (Alt: IRLL110) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk 0
RFQ

Part Details for IRLL110

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IRLL110 Part Data Attributes

IRLL110 Vishay Intertechnologies
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IRLL110 Vishay Intertechnologies Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-261AA
Package Description TO-261AA, 4 PIN
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 50 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLL110

This table gives cross-reference parts and alternative options found for IRLL110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHLL110-GE3 TRANSISTOR 1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOIC-4, FET General Purpose Power Vishay Siliconix IRLL110 vs SIHLL110-GE3
IRLL110 Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRLL110 vs IRLL110
IRLL110TRPBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Vishay Intertechnologies IRLL110 vs IRLL110TRPBF
IRLL110PBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN International Rectifier IRLL110 vs IRLL110PBF
IRLL110TRPBF Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN International Rectifier IRLL110 vs IRLL110TRPBF
IRLL110TR Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRLL110 vs IRLL110TR
Part Number Description Manufacturer Compare
BUK581-100A,135 0.9A, 100V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors IRLL110 vs BUK581-100A,135
BUK581-100A135 TRANSISTOR 0.9 A, 100 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IRLL110 vs BUK581-100A135
BUK581-100A 0.9A, 100V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-223, 4 PIN NXP Semiconductors IRLL110 vs BUK581-100A
BSP296NH6327 Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRLL110 vs BSP296NH6327
BSP296L6327HTSA1 Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRLL110 vs BSP296L6327HTSA1
934026490115 0.9A, 100V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors IRLL110 vs 934026490115
BSP296 Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN Infineon Technologies AG IRLL110 vs BSP296
SIHLL110-GE3 TRANSISTOR 1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOIC-4, FET General Purpose Power Vishay Siliconix IRLL110 vs SIHLL110-GE3
BUK581-100A-T 0.9A, 100V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors IRLL110 vs BUK581-100A-T
BUK581-100AT/R 0.9A, 100V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-4 NXP Semiconductors IRLL110 vs BUK581-100AT/R

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