Datasheets
IRLML2803TRPBF-1 by:

Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO3, 3 PIN

Part Details for IRLML2803TRPBF-1 by Infineon Technologies AG

Overview of IRLML2803TRPBF-1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRLML2803TRPBF-1

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IRLML2803TRPBF-1 Part Data Attributes

IRLML2803TRPBF-1 Infineon Technologies AG
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IRLML2803TRPBF-1 Infineon Technologies AG Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO3, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 1.2 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.54 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for IRLML2803TRPBF-1

This table gives cross-reference parts and alternative options found for IRLML2803TRPBF-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML2803TRPBF-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLML2803TR Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN International Rectifier IRLML2803TRPBF-1 vs IRLML2803TR
IRLML2803GTRPBF Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML2803TRPBF-1 vs IRLML2803GTRPBF
IRLML2803TRPBF Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN International Rectifier IRLML2803TRPBF-1 vs IRLML2803TRPBF
Part Number Description Manufacturer Compare
NDS351ANS62Z Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation IRLML2803TRPBF-1 vs NDS351ANS62Z
IRLML2803TR Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN International Rectifier IRLML2803TRPBF-1 vs IRLML2803TR
NDS351AN N-Channel Logic Level PowerTrench® MOSFET 30V, 1.4A, 160mΩ, 3000-REEL onsemi IRLML2803TRPBF-1 vs NDS351AN
IRLML2803GTRPBF Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML2803TRPBF-1 vs IRLML2803GTRPBF
NDS351ANL99Z Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation IRLML2803TRPBF-1 vs NDS351ANL99Z

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