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Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97K2352
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Newark | N Channel Mosfet, 30V, 1.2A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:850Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V, Msl:- Rohs Compliant: Yes |Infineon IRLML2803TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 314372 |
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$0.1480 / $0.4260 | Buy Now |
DISTI #
87AK1450
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Newark | Mosfet, N-Ch, 30V, 1.2A, Sot-23 Rohs Compliant: Yes |Infineon IRLML2803TRPBF Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0990 / $0.1140 | Buy Now |
DISTI #
IRLML2803PBFCT-ND
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DigiKey | MOSFET N-CH 30V 1.2A SOT23 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
117041 In Stock |
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$0.0710 / $0.4400 | Buy Now |
DISTI #
IRLML2803TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R - Tape and Reel (Alt: IRLML2803TRPBF) RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Container: Reel | 0 |
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RFQ | |
DISTI #
IRLML2803TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R - Tape and Reel (Alt: IRLML2803TRPBF) RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.0631 / $0.0722 | Buy Now |
DISTI #
IRLML2803TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 1.2A 3-Pin Micro T/R - Tape and Reel (Alt: IRLML2803TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.0631 / $0.0722 | Buy Now |
DISTI #
942-IRLML2803TRPBF
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Mouser Electronics | MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl RoHS: Compliant | 360228 |
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$0.0710 / $0.4300 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.4 Ohm 5 nC HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 1176000Reel |
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$0.0697 / $0.0786 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.4 Ohm 5 nC HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 291000Reel |
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$0.0697 / $0.0786 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.4 Ohm 5 nC HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.0697 / $0.0786 | Buy Now |
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IRLML2803TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLML2803TRPBF
Infineon Technologies AG
Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 1.2 A | |
Drain-source On Resistance-Max | 0.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.54 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLML2803TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML2803TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLML2803TR | Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN | International Rectifier | IRLML2803TRPBF vs IRLML2803TR |
IRLML2803GTRPBF | Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML2803TRPBF vs IRLML2803GTRPBF |
IRLML2803TRPBF-1 | Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO3, 3 PIN | Infineon Technologies AG | IRLML2803TRPBF vs IRLML2803TRPBF-1 |
IRLML2803TRPBF | Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN | International Rectifier | IRLML2803TRPBF vs IRLML2803TRPBF |