Part Details for IRLR024NTRPBF by Infineon Technologies AG
Overview of IRLR024NTRPBF by Infineon Technologies AG
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for IRLR024NTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
86AK5412
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Newark | Mosfet, N-Ch, 55V, 17A, To-252Aa Rohs Compliant: Yes |Infineon IRLR024NTRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3550 / $0.3930 | Buy Now |
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DISTI #
63J7621
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Newark | N Channel Mosfet, 55V, 17A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:17A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLR024NTRPBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.4980 / $0.9670 | Buy Now |
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DISTI #
IRLR024NPBFCT-ND
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DigiKey | MOSFET N-CH 55V 17A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
60762 In Stock |
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$0.2818 / $1.2300 | Buy Now |
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DISTI #
IRLR024NTRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR024NTRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 6000 |
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$0.2136 | Buy Now |
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DISTI #
IRLR024NTRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR024NTRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 95 Partner Stock |
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RFQ | |
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DISTI #
942-IRLR024NTRPBF
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Mouser Electronics | MOSFETs 55V 1 N-CH HEXFET 65mOhms 10nC RoHS: Compliant | 13124 |
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$0.2790 / $0.8600 | Buy Now |
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DISTI #
70017456
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.065Ohm, ID 17A, D-Pak (TO-252AA),PD 45W | Infineon IRLR024NTRPBF RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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$0.6100 / $0.7300 | RFQ |
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Future Electronics | Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Container: Reel | 268000Reel |
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$0.2200 / $0.2350 | Buy Now |
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Future Electronics | Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Container: Reel | 0Reel |
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$0.2200 / $0.2350 | Buy Now |
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Bristol Electronics | 342 |
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RFQ |
Part Details for IRLR024NTRPBF
IRLR024NTRPBF CAD Models
IRLR024NTRPBF Part Data Attributes
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IRLR024NTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR024NTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 68 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR024NTRPBF
This table gives cross-reference parts and alternative options found for IRLR024NTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR024NTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR024NPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR024NTRPBF vs IRLR024NPBF |
| AUIRLR024N | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR024NTRPBF vs AUIRLR024N |
| IRLR024NTR | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR024NTRPBF vs IRLR024NTR |
| IRLR024NTRRPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR024NTRPBF vs IRLR024NTRRPBF |
| IRLR024N | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR024NTRPBF vs IRLR024N |
| IRLR024NPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR024NTRPBF vs IRLR024NPBF |
| IRLR024NTRLPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR024NTRPBF vs IRLR024NTRLPBF |
| AUIRLR024NTRL | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR024NTRPBF vs AUIRLR024NTRL |
| AUIRLR024N | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR024NTRPBF vs AUIRLR024N |
| AUIRLR024NTRL | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR024NTRPBF vs AUIRLR024NTRL |