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Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLR8726TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9245
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Newark | Mosfet, N-Ch, 30V, 86A, To-252Aa, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:86A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V, Msl:- Rohs Compliant: Yes |Infineon IRLR8726TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 8400 |
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$0.2720 / $0.2960 | Buy Now |
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DISTI #
86AK5426
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Newark | Mosfet, N-Ch, 30V, 86A, To-252Aa Rohs Compliant: Yes |Infineon IRLR8726TRPBF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.2730 / $0.2940 | Buy Now |
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DISTI #
13AC9245
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Avnet Americas | Power MOSFET, N Channel, 30 V, 86 A, 0.004 ohm, TO-252AA, Surface Mount - Product that comes on tape, but is not reeled (Alt: 13AC9245) COO: Malaysia RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 4266 Partner Stock |
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$0.4190 / $0.5870 | Buy Now |
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DISTI #
IRLR8726TRPBF
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Avnet Americas | Power MOSFET, N Channel, 30 V, 86 A, 0.004 ohm, TO-252AA, Surface Mount - Tape and Reel (Alt: IRLR8726TRPBF) COO: Malaysia RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.1434 / $0.1464 | Buy Now |
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DISTI #
70019882
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RS | IRLR8726TRPBF N-CHANNEL MOSFET TRANSISTOR, 86 A, 30 V, 3+TAB-PIN DPAK Min Qty: 2000 Package Multiple: 1 Container: Bulk | 0 |
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$0.3780 / $0.4440 | RFQ |
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Bristol Electronics | Min Qty: 12 | 186 |
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$0.1688 / $0.4500 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 50A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 499 |
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$0.1471 / $0.2373 | Buy Now |
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DISTI #
IRLR8726TRPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 61A, Idm: 340A, 75W, DPAK Min Qty: 1 | 1489 |
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$0.2180 / $0.4100 | Buy Now |
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DISTI #
TMOSP12671
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Rutronik | MOSFET 30V 85A RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel |
Stock DE - 4000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.1821 / $0.2360 | Buy Now |
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Chip Stock | SingleN-Channel30V5.8mOhm23nCHEXFET®PowerMosfet-TO-252-3 | 67232 |
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RFQ |
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IRLR8726TRPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRLR8726TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0058 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 205 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLR8726TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR8726TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRLR8726TRR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK, 3 PIN | IRLR8726TRPBF vs IRLR8726TRR |
The maximum operating temperature range for the IRLR8726TRPBF is -55°C to 150°C.
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
The recommended gate drive voltage for the IRLR8726TRPBF is between 10V and 15V, with a maximum voltage of 20V.
Yes, the IRLR8726TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
Handle the device with ESD-protective equipment, use an ESD wrist strap, and ensure the device is stored in an ESD-protective package to prevent damage.