Datasheets
IRLZ24NPBF by:

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRLZ24NPBF by International Rectifier

Overview of IRLZ24NPBF by International Rectifier

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Price & Stock for IRLZ24NPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   95
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB 53
  • 1 $0.6500
  • 9 $0.5200
  • 39 $0.3900
$0.3900 / $0.6500 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Europe - 350
RFQ

Part Details for IRLZ24NPBF

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IRLZ24NPBF Part Data Attributes

IRLZ24NPBF International Rectifier
Buy Now Datasheet
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IRLZ24NPBF International Rectifier Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 68 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 45 W
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLZ24NPBF

This table gives cross-reference parts and alternative options found for IRLZ24NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLZ24NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLZ24N Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, International Rectifier IRLZ24NPBF vs IRLZ24N
IRLZ24NPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRLZ24NPBF vs IRLZ24NPBF
Part Number Description Manufacturer Compare
BUZ71 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRLZ24NPBF vs BUZ71
MTD20N06VT4 20A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC IRLZ24NPBF vs MTD20N06VT4
MTD3055VT4 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC IRLZ24NPBF vs MTD3055VT4
HUFA76409P3 18A, 60V, 0.074ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRLZ24NPBF vs HUFA76409P3
HUFA76413D3 20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation IRLZ24NPBF vs HUFA76413D3
IRFZ20 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRLZ24NPBF vs IRFZ20
HUF75329D3 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation IRLZ24NPBF vs HUF75329D3
934055349118 TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power NXP Semiconductors IRLZ24NPBF vs 934055349118
BUZ101SL Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens IRLZ24NPBF vs BUZ101SL
HUF75329D3ST 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC IRLZ24NPBF vs HUF75329D3ST

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