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Transistors Power Field-Effect Transistors IRLZ24NPBF

IRLZ24NPBF
Description: Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRLZ24NPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRLZ24NPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 26AC0698
Newark Planar_Mosfets Rohs Compliant: Yes |Infineon IRLZ24NPBF RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 1030
  • 10 $0.8110
  • 100 $0.6130
  • 500 $0.5250
  • 1,000 $0.4430
  • 2,500 $0.4330
  • 10,000 $0.4100
$0.4100 / $0.8110 Buy Now
DISTI # 63J7702
Newark N Channel Mosfet, 55V, 18A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Infineon IRLZ24NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $0.9720
  • 10 $0.8260
  • 100 $0.6560
  • 500 $0.5910
  • 1,000 $0.4990
  • 2,500 $0.4740
$0.4740 / $0.9720 Buy Now
DISTI # IRLZ24NPBF-ND
DigiKey MOSFET N-CH 55V 18A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube 696
In Stock
  • 1 $1.4600
  • 50 $0.6890
  • 100 $0.6137
  • 500 $0.4813
$0.4813 / $1.4600 Buy Now
DISTI # IRLZ24NPBF
Avnet Americas Trans MOSFET N-CH 55V 18A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRLZ24NPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Container: Tube 2030
  • 50 $0.4656
$0.4656 Buy Now
DISTI # IRLZ24NPBF
Avnet Americas Trans MOSFET N-CH 55V 18A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRLZ24NPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 326 Partner Stock
RFQ
DISTI # 942-IRLZ24NPBF
Mouser Electronics MOSFETs MOSFT 55V 18A 60mOhm 10nC LogLvlAB RoHS: Compliant 1465
  • 1 $1.0900
  • 10 $0.7380
  • 100 $0.5400
  • 500 $0.4590
  • 1,000 $0.4190
  • 2,000 $0.4060
$0.4060 / $1.0900 Buy Now
Future Electronics Single N-Channel 55 V 0.105 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks Container: Tube 850
Tube
  • 50 $0.4650
  • 250 $0.4450
  • 1,250 $0.4250
  • 2,500 $0.4150
  • 7,500 $0.3900
$0.3900 / $0.4650 Buy Now
Future Electronics Single N-Channel 55 V 0.105 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Container: Tube 310
Tube
  • 1 $0.4750
  • 125 $0.4550
  • 400 $0.4400
  • 1,500 $0.4200
  • 5,000 $0.3900
$0.3900 / $0.4750 Buy Now
Future Electronics Single N-Channel 55 V 0.105 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 50 Lead time: 10 Weeks Container: Reel 0
Reel
  • 50 $0.4650
  • 250 $0.4450
  • 1,250 $0.4250
  • 2,500 $0.4150
  • 7,500 $0.3900
$0.3900 / $0.4650 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 319
  • 1 $1.5400
  • 17 $0.7700
  • 79 $0.4620
$0.4620 / $1.5400 Buy Now
Rochester Electronics IRLZ24NPBF - PLANAR 40<-<100V RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 326
  • 1 $0.4150
  • 25 $0.4067
  • 100 $0.3901
  • 500 $0.3735
  • 1,000 $0.3528
$0.3528 / $0.4150 Buy Now
DISTI # IRLZ24NPBF
TME Transistor: N-MOSFET, unipolar, 55V, 18A, 45W, TO220AB Min Qty: 1 20
  • 1 $0.8690
  • 10 $0.7280
  • 50 $0.6200
  • 100 $0.5720
  • 250 $0.5090
  • 500 $0.4610
  • 1,000 $0.4130
$0.4130 / $0.8690 Buy Now
DISTI # C1S322000631872
Chip1Stop Trans MOSFET N-CH Si 55V 18A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Container: Tube 845
  • 5 $0.4780
  • 10 $0.3720
  • 50 $0.3410
  • 500 $0.3360
$0.3360 / $0.4780 Buy Now
DISTI # SP001553022
EBV Elektronik Trans MOSFET N-CH 55V 18A 3-Pin(3+Tab) TO-220AB (Alt: SP001553022) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days EBV - 4000
Buy Now
LCSC 55V 18A 45W 60m10V11A 2V250uA 1 N-Channel TO-220AB MOSFETs ROHS 25
  • 1 $0.7899
  • 10 $0.6562
  • 50 $0.5885
  • 100 $0.5224
  • 500 $0.4815
  • 1,000 $0.4611
$0.4611 / $0.7899 Buy Now
New Advantage Corporation Single N-Channel 55 V 0.105 Ohm 15 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 700
  • 400 $0.4071
  • 700 $0.3800
$0.3800 / $0.4071 Buy Now
Win Source Electronics MOSFET N-CH 55V 18A TO-220AB / Trans MOSFET N-CH Si 55V 18A 3-Pin(3+Tab) TO-220AB Tube 79700
  • 85 $0.6120
  • 200 $0.5020
  • 310 $0.4860
  • 425 $0.4710
  • 550 $0.4550
  • 740 $0.4080
$0.4080 / $0.6120 Buy Now

CAD Models for IRLZ24NPBF by Infineon Technologies AG
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Part Data Attributes for IRLZ24NPBF by Infineon Technologies AG
Parametric Data

IRLZ24NPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
End Of Life
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
68 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
18 A
Drain-source On Resistance-Max
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
45 W
Pulsed Drain Current-Max (IDM)
72 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRLZ24NPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRLZ24NPBF

This table gives cross-reference parts and alternative options found for IRLZ24NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLZ24NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRLZ24N Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRLZ24NPBF vs IRLZ24N
IRLZ24N Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, International Rectifier IRLZ24NPBF vs IRLZ24N
IRLZ24NPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRLZ24NPBF vs IRLZ24NPBF
Part Number Description Manufacturer Compare
BUK453-60A TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRLZ24NPBF vs BUK453-60A
RFD14N05L N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, 1800-TUBE onsemi IRLZ24NPBF vs RFD14N05L
NTD18N06LT4G Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi IRLZ24NPBF vs NTD18N06LT4G
2SK2412-AZ Power Field-Effect Transistor, 20A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN NEC Electronics Group IRLZ24NPBF vs 2SK2412-AZ
MTD1N50E 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi IRLZ24NPBF vs MTD1N50E
FQD24N08 Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRLZ24NPBF vs FQD24N08
IRFR024NTRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 Infineon Technologies AG IRLZ24NPBF vs IRFR024NTRPBF
RFD14N05_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN Fairchild Semiconductor Corporation IRLZ24NPBF vs RFD14N05_NL
NTD18N06 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi IRLZ24NPBF vs NTD18N06
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics IRLZ24NPBF vs STD30NE06

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