Part Details for IS45S16800J-6TLA1 by Integrated Silicon Solution Inc
Results Overview of IS45S16800J-6TLA1 by Integrated Silicon Solution Inc
- Distributor Offerings: (1 listing)
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- Tariff Estimator: (Available) NEW
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
IS45S16800J-6TLA1 Information
IS45S16800J-6TLA1 by Integrated Silicon Solution Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for IS45S16800J-6TLA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IS45S16800J-6TLA1
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Avnet Americas | AUTOMOTIVE (-40 TO +85C), 128M, 3.3V, SD - Bulk (Alt: IS45S16800J-6TLA1) COO: XX RoHS: Not Compliant Min Qty: 324 Package Multiple: 108 Lead time: 14 Weeks, 0 Days Container: Bulk | 0 |
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$3.1331 / $3.2769 | Buy Now |
US Tariff Estimator: IS45S16800J-6TLA1 by Integrated Silicon Solution Inc
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for IS45S16800J-6TLA1
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IS45S16800J-6TLA1 Part Data Attributes
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IS45S16800J-6TLA1
Integrated Silicon Solution Inc
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Datasheet
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IS45S16800J-6TLA1
Integrated Silicon Solution Inc
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, TSOP2-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | Integrated Silicon Solution Inc. | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e3 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Refresh Cycles | 4096 | |
| Screening Level | AEC-Q100 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.03 A | |
| Supply Current-Max | 0.14 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |