Datasheets
IS61VF25618A-7.5B2 by:

Cache SRAM, 256KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119

Part Details for IS61VF25618A-7.5B2 by Integrated Silicon Solution Inc

Overview of IS61VF25618A-7.5B2 by Integrated Silicon Solution Inc

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Part Details for IS61VF25618A-7.5B2

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IS61VF25618A-7.5B2 Part Data Attributes:

IS61VF25618A-7.5B2 Integrated Silicon Solution Inc
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IS61VF25618A-7.5B2 Integrated Silicon Solution Inc Cache SRAM, 256KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code BGA
Package Description BGA, BGA119,7X17,50
Pin Count 119
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 7.5 ns
Additional Feature FLOW-THROUGH ARCHITECTURE
Clock Frequency-Max (fCLK) 117 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B119
JESD-609 Code e0
Length 22 mm
Memory Density 4718592 bit
Memory IC Type CACHE SRAM
Memory Width 18
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 119
Number of Words 262144 words
Number of Words Code 256000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256KX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code BGA
Package Equivalence Code BGA119,7X17,50
Package Shape RECTANGULAR
Package Style GRID ARRAY
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Seated Height-Max 2.41 mm
Standby Current-Max 0.03 A
Standby Voltage-Min 2.38 V
Supply Current-Max 0.155 mA
Supply Voltage-Max (Vsup) 2.75 V
Supply Voltage-Min (Vsup) 2.375 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 1.27 mm
Terminal Position BOTTOM
Width 14 mm

Alternate Parts for IS61VF25618A-7.5B2

This table gives cross-reference parts and alternative options found for IS61VF25618A-7.5B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61VF25618A-7.5B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IDT71V35781SA183B Cache SRAM, 256KX18, 3.3ns, CMOS, PBGA119, BGA-119 Integrated Device Technology Inc IS61VF25618A-7.5B2 vs IDT71V35781SA183B
IS61DDB41M18A-333B4 DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 Integrated Silicon Solution Inc IS61VF25618A-7.5B2 vs IS61DDB41M18A-333B4
K7A163600M-TC16 Cache SRAM, 512KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 Samsung Semiconductor IS61VF25618A-7.5B2 vs K7A163600M-TC16
MCM63R736RS3 Late-Write SRAM, 128KX36, 1.5ns, CMOS, CBGA119, FLIP CHIP, CERAMIC, BGA-119 Motorola Semiconductor Products IS61VF25618A-7.5B2 vs MCM63R736RS3
CY7C1460V25-167BZC ZBT SRAM, 1MX36, 3.5ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, FBGA-165 Cypress Semiconductor IS61VF25618A-7.5B2 vs CY7C1460V25-167BZC
K7Q323654M-FC20 QDR SRAM, 1MX36, 2.2ns, CMOS, PBGA165, 15 X 17 MM, FBGA-165 Samsung Semiconductor IS61VF25618A-7.5B2 vs K7Q323654M-FC20
K7P401823M-H6500 Standard SRAM, 256KX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 Samsung Semiconductor IS61VF25618A-7.5B2 vs K7P401823M-H6500
K7B401825A-TC65 Cache SRAM, 256KX18, 6.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 Samsung Semiconductor IS61VF25618A-7.5B2 vs K7B401825A-TC65
UPD44164364F5-E30-EQ1 DDR SRAM, 512KX36, 0.27ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 NEC Electronics Group IS61VF25618A-7.5B2 vs UPD44164364F5-E30-EQ1
CY7C1305BV18-133BZC QDR SRAM, 1MX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165 Cypress Semiconductor IS61VF25618A-7.5B2 vs CY7C1305BV18-133BZC

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