Part Details for IS61VF25618A-7.5B2 by Integrated Silicon Solution Inc
Overview of IS61VF25618A-7.5B2 by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IS61VF25618A-7.5B2
IS61VF25618A-7.5B2 CAD Models
IS61VF25618A-7.5B2 Part Data Attributes:
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IS61VF25618A-7.5B2
Integrated Silicon Solution Inc
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Datasheet
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IS61VF25618A-7.5B2
Integrated Silicon Solution Inc
Cache SRAM, 256KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
Part Package Code | BGA | |
Package Description | BGA, BGA119,7X17,50 | |
Pin Count | 119 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 7.5 ns | |
Additional Feature | FLOW-THROUGH ARCHITECTURE | |
Clock Frequency-Max (fCLK) | 117 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-PBGA-B119 | |
JESD-609 Code | e0 | |
Length | 22 mm | |
Memory Density | 4718592 bit | |
Memory IC Type | CACHE SRAM | |
Memory Width | 18 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 119 | |
Number of Words | 262144 words | |
Number of Words Code | 256000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 256KX18 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | BGA | |
Package Equivalence Code | BGA119,7X17,50 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Parallel/Serial | PARALLEL | |
Qualification Status | Not Qualified | |
Seated Height-Max | 2.41 mm | |
Standby Current-Max | 0.03 A | |
Standby Voltage-Min | 2.38 V | |
Supply Current-Max | 0.155 mA | |
Supply Voltage-Max (Vsup) | 2.75 V | |
Supply Voltage-Min (Vsup) | 2.375 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | BALL | |
Terminal Pitch | 1.27 mm | |
Terminal Position | BOTTOM | |
Width | 14 mm |
Alternate Parts for IS61VF25618A-7.5B2
This table gives cross-reference parts and alternative options found for IS61VF25618A-7.5B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61VF25618A-7.5B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IDT71V35781SA183B | Cache SRAM, 256KX18, 3.3ns, CMOS, PBGA119, BGA-119 | Integrated Device Technology Inc | IS61VF25618A-7.5B2 vs IDT71V35781SA183B |
IS61DDB41M18A-333B4 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | IS61VF25618A-7.5B2 vs IS61DDB41M18A-333B4 |
K7A163600M-TC16 | Cache SRAM, 512KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Samsung Semiconductor | IS61VF25618A-7.5B2 vs K7A163600M-TC16 |
MCM63R736RS3 | Late-Write SRAM, 128KX36, 1.5ns, CMOS, CBGA119, FLIP CHIP, CERAMIC, BGA-119 | Motorola Semiconductor Products | IS61VF25618A-7.5B2 vs MCM63R736RS3 |
CY7C1460V25-167BZC | ZBT SRAM, 1MX36, 3.5ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, FBGA-165 | Cypress Semiconductor | IS61VF25618A-7.5B2 vs CY7C1460V25-167BZC |
K7Q323654M-FC20 | QDR SRAM, 1MX36, 2.2ns, CMOS, PBGA165, 15 X 17 MM, FBGA-165 | Samsung Semiconductor | IS61VF25618A-7.5B2 vs K7Q323654M-FC20 |
K7P401823M-H6500 | Standard SRAM, 256KX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | Samsung Semiconductor | IS61VF25618A-7.5B2 vs K7P401823M-H6500 |
K7B401825A-TC65 | Cache SRAM, 256KX18, 6.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Samsung Semiconductor | IS61VF25618A-7.5B2 vs K7B401825A-TC65 |
UPD44164364F5-E30-EQ1 | DDR SRAM, 512KX36, 0.27ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 | NEC Electronics Group | IS61VF25618A-7.5B2 vs UPD44164364F5-E30-EQ1 |
CY7C1305BV18-133BZC | QDR SRAM, 1MX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165 | Cypress Semiconductor | IS61VF25618A-7.5B2 vs CY7C1305BV18-133BZC |