Datasheets
ISL73024SEHMX by:

200V, 7.5A Enhancement Mode GaN Power Transistors, DIE, /

Part Details for ISL73024SEHMX by Renesas Electronics Corporation

Overview of ISL73024SEHMX by Renesas Electronics Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for ISL73024SEHMX

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ISL73024SEHMX Part Data Attributes:

ISL73024SEHMX Renesas Electronics Corporation
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ISL73024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors, DIE, /
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code DIE
Package Description ,
Manufacturer Package Code ISLDUMMY00
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Renesas Electronics
Additional Feature HIGH RELIABILITY
Case Connection DRAIN SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 7.5 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology HIGH ELECTRON MOBILITY
Feedback Cap-Max (Crss) 1 pF
JESD-30 Code R-XBCC-N7
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material GALLIUM NITRIDE

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