There are no models available for this part yet.
Overview of IXFH76N06-11 by IXYS Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IXFH76N06-11 by IXYS Corporation
Part Data Attributes for IXFH76N06-11 by IXYS Corporation
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Pbfree Code
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Yes
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Rohs Code
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Yes
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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IXYS CORP
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Part Package Code
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TO-247AD
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Package Description
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TO-247AD, 3 PIN
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Pin Count
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3
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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2000 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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60 V
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Drain Current-Max (ID)
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76 A
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Drain-source On Resistance-Max
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0.011 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-247AD
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JESD-30 Code
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R-PSFM-T3
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JESD-609 Code
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e3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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360 W
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Pulsed Drain Current-Max (IDM)
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304 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Finish
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MATTE TIN
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for IXFH76N06-11
This table gives cross-reference parts and alternative options found for IXFH76N06-11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH76N06-11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MCB85N06Y-TP-HF | Power Field-Effect Transistor, | Micro Commercial Components | IXFH76N06-11 vs MCB85N06Y-TP-HF |
| NDB7060LL86Z | Power Field-Effect Transistor, 75A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | IXFH76N06-11 vs NDB7060LL86Z |
| IPB120N06NGATMA1 | Power Field-Effect Transistor, 75A I(D), 60V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IXFH76N06-11 vs IPB120N06NGATMA1 |
| STP80N06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | IXFH76N06-11 vs STP80N06-10 |
| SPB77N06S2-12 | Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IXFH76N06-11 vs SPB77N06S2-12 |
| IPB80N06S2L09XT | Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IXFH76N06-11 vs IPB80N06S2L09XT |
| SPB77N06S212DTMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IXFH76N06-11 vs SPB77N06S212DTMA1 |
| IPB120N06NG | Power Field-Effect Transistor, 75A I(D), 60V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IXFH76N06-11 vs IPB120N06NG |
| SPB80N06S2L-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IXFH76N06-11 vs SPB80N06S2L-07 |
| SPB80N06S2L-11 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IXFH76N06-11 vs SPB80N06S2L-11 |