Part Details for IXFK52N30Q by IXYS Corporation
Overview of IXFK52N30Q by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IXFK52N30Q
IXFK52N30Q CAD Models
IXFK52N30Q Part Data Attributes
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IXFK52N30Q
IXYS Corporation
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Datasheet
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IXFK52N30Q
IXYS Corporation
Power Field-Effect Transistor, 52A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-264 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 52 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-264 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 360 W | |
Pulsed Drain Current-Max (IDM) | 208 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IXFK52N30Q
This table gives cross-reference parts and alternative options found for IXFK52N30Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK52N30Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT30M40LVFRG | Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | IXFK52N30Q vs APT30M40LVFRG |
APT30M40LVFR | Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | IXFK52N30Q vs APT30M40LVFR |
APT30M40LVR | Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | IXFK52N30Q vs APT30M40LVR |
IXFK73N30Q | Power Field-Effect Transistor, 73A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | Littelfuse Inc | IXFK52N30Q vs IXFK73N30Q |
APT30M40LVRG | Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | IXFK52N30Q vs APT30M40LVRG |
STY60NK30Z | N-channel 300 V, 33 mOhm typ., 60 A SuperMESH Power MOSFET in a Max247 package | STMicroelectronics | IXFK52N30Q vs STY60NK30Z |
IXFK73N30 | Power Field-Effect Transistor, 73A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | Littelfuse Inc | IXFK52N30Q vs IXFK73N30 |
IXFX90N30 | Power Field-Effect Transistor, 90A I(D), 300V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXYS Corporation | IXFK52N30Q vs IXFX90N30 |
IXFK90N30 | Power Field-Effect Transistor, 90A I(D), 300V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | IXFK52N30Q vs IXFK90N30 |