Part Details for IXFK90N30 by IXYS Corporation
Overview of IXFK90N30 by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFK90N30
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFK90N30-ND
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DigiKey | MOSFET N-CH 300V 90A TO-264 Min Qty: 25 Lead time: 43 Weeks Container: Tube | Limited Supply - Call |
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$15.5560 | Buy Now |
DISTI #
747-IXFK90N30
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Mouser Electronics | MOSFETs 90 Amps 300V 0.033 Rds RoHS: Compliant | 0 |
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Order Now | |
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Bristol Electronics | 123 |
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RFQ |
Part Details for IXFK90N30
IXFK90N30 CAD Models
IXFK90N30 Part Data Attributes
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IXFK90N30
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFK90N30
IXYS Corporation
Power Field-Effect Transistor, 90A I(D), 300V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-264 | |
Package Description | TO-264, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 90 A | |
Drain-source On Resistance-Max | 0.033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-264 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 560 W | |
Pulsed Drain Current-Max (IDM) | 360 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFK90N30
This table gives cross-reference parts and alternative options found for IXFK90N30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK90N30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT30M40LVFRG | Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | IXFK90N30 vs APT30M40LVFRG |
APT30M40LVFR | Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | IXFK90N30 vs APT30M40LVFR |
APT30M40LVR | Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | IXFK90N30 vs APT30M40LVR |
IXFK73N30Q | Power Field-Effect Transistor, 73A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | Littelfuse Inc | IXFK90N30 vs IXFK73N30Q |
APT30M40LVRG | Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | IXFK90N30 vs APT30M40LVRG |
IXFK52N30Q | Power Field-Effect Transistor, 52A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | IXFK90N30 vs IXFK52N30Q |
STY60NK30Z | N-channel 300 V, 33 mOhm typ., 60 A SuperMESH Power MOSFET in a Max247 package | STMicroelectronics | IXFK90N30 vs STY60NK30Z |
IXFK73N30 | Power Field-Effect Transistor, 73A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | Littelfuse Inc | IXFK90N30 vs IXFK73N30 |
IXFX90N30 | Power Field-Effect Transistor, 90A I(D), 300V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXYS Corporation | IXFK90N30 vs IXFX90N30 |