Part Details for IXFN21N100Q by Littelfuse Inc
Overview of IXFN21N100Q by Littelfuse Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for IXFN21N100Q
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
37AJ2348
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Newark | Discmsft Nch Hiperfet-Qcis Sot-227B/Mini |Littelfuse IXFN21N100Q Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for IXFN21N100Q
IXFN21N100Q CAD Models
IXFN21N100Q Part Data Attributes
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IXFN21N100Q
Littelfuse Inc
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Datasheet
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IXFN21N100Q
Littelfuse Inc
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 520 W | |
| Pulsed Drain Current-Max (IDM) | 84 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN21N100Q
This table gives cross-reference parts and alternative options found for IXFN21N100Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN21N100Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFL44N100P | Power Field-Effect Transistor, 22A I(D), 1000V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I5PAK-3 | Littelfuse Inc | IXFN21N100Q vs IXFL44N100P |
| IXFR40N90P | Power Field-Effect Transistor, 21A I(D), 900V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN | Littelfuse Inc | IXFN21N100Q vs IXFR40N90P |
| APT10050JN | Power Field-Effect Transistor, 20.5A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFN21N100Q vs APT10050JN |
| APT19F100J | Power Field-Effect Transistor, 20A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFN21N100Q vs APT19F100J |
| IXFR24N100Q3 | Power Field-Effect Transistor, 18A I(D), 1000V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN | IXYS Corporation | IXFN21N100Q vs IXFR24N100Q3 |
| APTML100U60R020T1AG | Power Field-Effect Transistor, 20A I(D), 1000V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP1, 12 PIN | Microsemi Corporation | IXFN21N100Q vs APTML100U60R020T1AG |
| APT10050JN | 20.5A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 | Microsemi Corporation | IXFN21N100Q vs APT10050JN |
| IXFR21N100Q | Power Field-Effect Transistor, 18A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IXYS Corporation | IXFN21N100Q vs IXFR21N100Q |