Part Details for IXFR40N90P by Littelfuse Inc
Overview of IXFR40N90P by Littelfuse Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFR40N90P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0897
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Newark | Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube |Littelfuse IXFR40N90P Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$19.2700 | Buy Now |
Part Details for IXFR40N90P
IXFR40N90P CAD Models
IXFR40N90P Part Data Attributes
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IXFR40N90P
Littelfuse Inc
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Datasheet
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IXFR40N90P
Littelfuse Inc
Power Field-Effect Transistor, 21A I(D), 900V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | PLASTIC, ISOPLUS247, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.23 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFR40N90P
This table gives cross-reference parts and alternative options found for IXFR40N90P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR40N90P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFL44N100P | Power Field-Effect Transistor, 22A I(D), 1000V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I5PAK-3 | Littelfuse Inc | IXFR40N90P vs IXFL44N100P |
| APT10050JN | Power Field-Effect Transistor, 20.5A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFR40N90P vs APT10050JN |
| APT19F100J | Power Field-Effect Transistor, 20A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR40N90P vs APT19F100J |
| IXFR24N100Q3 | Power Field-Effect Transistor, 18A I(D), 1000V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN | IXYS Corporation | IXFR40N90P vs IXFR24N100Q3 |
| IXFN21N100Q | Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFR40N90P vs IXFN21N100Q |
| APTML100U60R020T1AG | Power Field-Effect Transistor, 20A I(D), 1000V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP1, 12 PIN | Microsemi Corporation | IXFR40N90P vs APTML100U60R020T1AG |
| APT10050JN | 20.5A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 | Microsemi Corporation | IXFR40N90P vs APT10050JN |
| IXFR21N100Q | Power Field-Effect Transistor, 18A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IXYS Corporation | IXFR40N90P vs IXFR21N100Q |