Part Details for IXFN36N60 by IXYS Corporation
Overview of IXFN36N60 by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFN36N60
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFN36N60-ND
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DigiKey | MOSFET N-CH 600V 36A SOT-227B Min Qty: 10 Lead time: 43 Weeks Container: Tube | Limited Supply - Call |
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$26.2770 | Buy Now |
DISTI #
747-IXFN36N60
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Mouser Electronics | MOSFET Modules 600V 36A RoHS: Compliant | 0 |
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Order Now | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 36A I(D), 600V, 0.18OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 8 |
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$25.6201 | Buy Now |
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ComSIT USA | HiPerFET Power MOSFET Power Field-Effect Transistor, 36A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant |
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RFQ |
Part Details for IXFN36N60
IXFN36N60 CAD Models
IXFN36N60 Part Data Attributes
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IXFN36N60
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN36N60
IXYS Corporation
Power Field-Effect Transistor, 36A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | SOT-227 | |
Package Description | SOT-227B, MINIBLOC-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 36 A | |
Drain-source On Resistance-Max | 0.18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 520 W | |
Power Dissipation-Max (Abs) | 520 W | |
Pulsed Drain Current-Max (IDM) | 144 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | NICKEL | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFN36N60
This table gives cross-reference parts and alternative options found for IXFN36N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN36N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXFN44N60 | Power Field-Effect Transistor, | Littelfuse Inc | IXFN36N60 vs IXFN44N60 |
BUK482-60A | TRANSISTOR 2.7 A, 60 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IXFN36N60 vs BUK482-60A |
BUK417-500BE | TRANSISTOR 28 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IXFN36N60 vs BUK417-500BE |
IXFK44N50F | Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | IXFN36N60 vs IXFK44N50F |
IXFN44N50 | Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | Littelfuse Inc | IXFN36N60 vs IXFN44N50 |
IXFN80N50Q3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFN36N60 vs IXFN80N50Q3 |
IXFN64N50PD2 | Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFN36N60 vs IXFN64N50PD2 |
APT40M75JN | 56A, 400V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 | Microsemi Corporation | IXFN36N60 vs APT40M75JN |
IXFE48N50Q | Power Field-Effect Transistor, 41A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXFN36N60 vs IXFE48N50Q |
IXFX44N50F | Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | IXFN36N60 vs IXFX44N50F |