Parametric results for: IXFN36N60 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3

3 hits Apply

2500.0 mJ 1

3 hits Apply

DRAIN 1 ISOLATED 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

600 V 3

3 hits Apply

Drain Current-Max (ID) (1)

36 A 3

3 hits Apply

Drain-source On Resistance-Max (2)

165 mΩ 1 180 mΩ 2

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PUFM-X4 3

3 hits Apply

Manufacturer (2)

IXYS Corporation 2 Littelfuse Inc 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Not Recommended 1 Obsolete 1 Transferred 1

3 hits Apply

Yes 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

520 W 2

3 hits Apply

520 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply