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Transistors / Power Field-Effect Transistors / IXFP12N50P
Datasheets
IXFP12N50P by:

Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Part Details for IXFP12N50P by IXYS Corporation

Overview of IXFP12N50P by IXYS Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXFP12N50P

Part # Distributor Description Stock Price Buy
DISTI # 02AC9816
Newark Mosfet, N-Ch, 500V, 12A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:12A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5.5V Rohs Compliant: Yes |Ixys Semiconductor IXFP12N50P Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 300
  • 1 $4.1500
  • 10 $3.4800
  • 25 $3.2100
  • 50 $2.9400
  • 100 $2.5600
  • 250 $2.5100
  • 500 $2.2800
$2.2800 / $4.1500 Buy Now
DISTI # IXFP12N50P-ND
DigiKey MOSFET N-CH 500V 12A TO220AB Min Qty: 1 Lead time: 44 Weeks Container: Tube 278
In Stock
  • 1 $3.9900
  • 50 $3.1580
  • 100 $2.7068
  • 500 $2.4061
  • 1,000 $2.0602
  • 2,000 $1.9399
  • 5,000 $1.8611
$1.8611 / $3.9900 Buy Now
DISTI # 747-IXFP12N50P
Mouser Electronics MOSFET HiPERFET Id12 BVdass500 RoHS: Compliant 497
  • 1 $3.9900
  • 10 $3.4500
  • 50 $2.6700
  • 100 $2.3600
  • 250 $2.3100
  • 500 $2.2700
  • 1,000 $1.9300
$1.9300 / $3.9900 Buy Now
Future Electronics IXFP12N50P Series 500 V 12 A 500 mOhm PolarTM Power MOSFET - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 44 Weeks Container: Tube 300
Tube
  • 50 $1.8100
  • 150 $1.7600
  • 500 $1.7200
  • 1,000 $1.6900
  • 2,000 $1.6400
$1.6400 / $1.8100 Buy Now
Future Electronics IXFP12N50P Series 500 V 12 A 500 mOhm PolarTM Power MOSFET - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 44 Weeks Container: Tube 150
Tube
  • 50 $1.8100
  • 150 $1.7600
  • 500 $1.7200
  • 1,000 $1.6900
  • 2,000 $1.6400
$1.6400 / $1.8100 Buy Now
DISTI # IXFP12N50P
TTI MOSFET HiPERFET Id12 BVdass500 Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $1.9400
  • 500 $1.9000
  • 1,000 $1.8600
$1.8600 / $1.9400 Buy Now
DISTI # IXFP12N50P
TME Transistor: N-MOSFET, unipolar, 500V, 12A, 200W, TO220AB Min Qty: 1 0
  • 1 $3.6200
  • 10 $3.0600
  • 50 $2.6300
  • 100 $2.4600
  • 500 $2.1000
$2.1000 / $3.6200 RFQ
Ameya Holding Limited   Min Qty: 5 10
  • 5 $4.0274
  • 15 $3.9066
  • 25 $3.7893
$3.7893 / $4.0274 Buy Now

Part Details for IXFP12N50P

IXFP12N50P CAD Models

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IXFP12N50P Part Data Attributes

Parametric Data
IXFP12N50P IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFP12N50P IXYS Corporation Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 600 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFP12N50P

This table gives cross-reference parts and alternative options found for IXFP12N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFP12N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTI12N50P Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC, LEADED TO-263, 3 PIN Littelfuse Inc IXFP12N50P vs IXTI12N50P
IXTI12N50P Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC, LEADED TO-263, 3 PIN IXYS Corporation IXFP12N50P vs IXTI12N50P
IRFBL12N50A Power Field-Effect Transistor, 13A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER D2PAK-3 International Rectifier IXFP12N50P vs IRFBL12N50A
IRF450PBF Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IXFP12N50P vs IRF450PBF
FML12N50ES Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN Fuji Electric Co Ltd IXFP12N50P vs FML12N50ES
IXTP12N50P Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Littelfuse Inc IXFP12N50P vs IXTP12N50P
IXTA12N50P Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Littelfuse Inc IXFP12N50P vs IXTA12N50P
SFF450 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, MILPACK-3 Solid State Devices Inc (SSDI) IXFP12N50P vs SFF450
NTP12N50 12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IXFP12N50P vs NTP12N50
IXTA12N50P Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN IXYS Corporation IXFP12N50P vs IXTA12N50P

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