Part Details for IXFR55N50F by IXYS Corporation
Overview of IXFR55N50F by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for IXFR55N50F
IXFR55N50F CAD Models
IXFR55N50F Part Data Attributes
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IXFR55N50F
IXYS Corporation
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Datasheet
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IXFR55N50F
IXYS Corporation
Power Field-Effect Transistor, 47A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | ISOPLUS247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 47 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 400 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFR55N50F
This table gives cross-reference parts and alternative options found for IXFR55N50F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR55N50F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFR55N50 | Power Field-Effect Transistor, 48A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IXYS Corporation | IXFR55N50F vs IXFR55N50 |
| APT51F50J | Power Field-Effect Transistor, 51A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR55N50F vs APT51F50J |
| APT51F50J | Power Field-Effect Transistor, 51A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 | Microsemi Corporation | IXFR55N50F vs APT51F50J |
| APT51M50J | Power Field-Effect Transistor, 51A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR55N50F vs APT51M50J |
| APT51M50J | Power Field-Effect Transistor, 51A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 | Microsemi Corporation | IXFR55N50F vs APT51M50J |
| APT50M80JFLC | 52A, 500V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 | Microsemi Corporation | IXFR55N50F vs APT50M80JFLC |
| STE50NM50 | 50A, 500V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 | STMicroelectronics | IXFR55N50F vs STE50NM50 |