Part Details for IXFT30N50Q3 by IXYS Corporation
Results Overview of IXFT30N50Q3 by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IXFT30N50Q3 Information
IXFT30N50Q3 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFT30N50Q3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFT30N50Q3-ND
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DigiKey | MOSFET N-CH 500V 30A TO268 Min Qty: 1 Lead time: 44 Weeks Container: Tube |
30 In Stock |
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$8.6854 / $16.2900 | Buy Now |
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DISTI #
747-IXFT30N50Q3
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Mouser Electronics | MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A RoHS: Compliant | 260 |
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$8.6800 / $9.3900 | Buy Now |
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DISTI #
IXFT30N50Q3
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TTI | MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$8.6900 / $8.8400 | Buy Now |
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DISTI #
IXFT30N50Q3
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TME | Transistor: N-MOSFET, unipolar, 500V, 30A, 690W, TO268 Min Qty: 1 | 0 |
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$13.1900 | RFQ |
Part Details for IXFT30N50Q3
IXFT30N50Q3 CAD Models
IXFT30N50Q3 Part Data Attributes
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IXFT30N50Q3
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFT30N50Q3
IXYS Corporation
Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Part Package Code | TO-268AA | |
| Package Description | Plastic, To-268, 3 Pin | |
| Pin Count | 4 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 1500 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 690 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IXFT30N50Q3
This table gives cross-reference parts and alternative options found for IXFT30N50Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT30N50Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2SK4199LS | onsemi | Check for Price | TRANSISTOR 3 A, 650 V, 3.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FI-LS, 3 PIN, FET General Purpose Power | IXFT30N50Q3 vs 2SK4199LS |
| 2SK3780-01 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | IXFT30N50Q3 vs 2SK3780-01 |
| 2SK2044LS | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | IXFT30N50Q3 vs 2SK2044LS |
| 2SK1417 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 25A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXFT30N50Q3 vs 2SK1417 |
| 2SK1901 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXFT30N50Q3 vs 2SK1901 |
| IXFH36N55Q | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXFT30N50Q3 vs IXFH36N55Q |
| 2SK4120LS | onsemi | Check for Price | TRANSISTOR 10 A, 450 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FI(LS), 3 PIN, FET General Purpose Power | IXFT30N50Q3 vs 2SK4120LS |
| 2SK1427 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXFT30N50Q3 vs 2SK1427 |
| 2SJ368 | Shindengen Electronic Manufacturing Co Ltd | Check for Price | Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | IXFT30N50Q3 vs 2SJ368 |
| 2SK4098LS | SANYO Semiconductor Co Ltd | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | IXFT30N50Q3 vs 2SK4098LS |
IXFT30N50Q3 Frequently Asked Questions (FAQ)
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The maximum junction temperature for the IXFT30N50Q3 is 150°C, but it's recommended to keep it below 125°C for reliable operation.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The heat sink should be attached using a thermal interface material with a thermal conductivity of at least 1 W/m-K.
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The recommended gate drive voltage for the IXFT30N50Q3 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IXFT30N50Q3 can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive signals are properly synchronized to prevent shoot-through currents.
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The maximum dv/dt rating for the IXFT30N50Q3 is 1000 V/μs, but it's recommended to limit it to 500 V/μs or less to ensure reliable operation.