IXFX64N60Q3
Description: Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

Overview of IXFX64N60Q3 by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Electronic Manufacturing

Price & Stock for IXFX64N60Q3 by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # IXFX64N60Q3-ND
DigiKey MOSFET N-CH 600V 64A PLUS247-3 Min Qty: 1 Lead time: 21 Weeks Container: Tube 17
In Stock
  • 1 $25.0300
$25.0300 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 26 Weeks Container: Tube 0
Tube
  • 30 $25.4600
$25.4600 Buy Now
Bristol Electronics   19
RFQ
Quest Components   15
  • 1 $22.6080
  • 12 $21.4776
$21.4776 / $22.6080 Buy Now
DISTI # IXFX64N60Q3
TTI MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/64A Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $22.7800
$22.7800 Buy Now

CAD Models for IXFX64N60Q3 by IXYS Corporation
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Part Data Attributes for IXFX64N60Q3 by IXYS Corporation

IXFX64N60Q3
IXYS Corporation
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Package Description
PLASTIC, PLUS247, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
3000 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
64 A
Drain-source On Resistance-Max
0.095 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1250 W
Pulsed Drain Current-Max (IDM)
250 A
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IXFX64N60Q3
    IXYS Corporation
    Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
    VS

Alternate Parts for IXFX64N60Q3

This table gives cross-reference parts and alternative options found for IXFX64N60Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX64N60Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXFX64N60P3 Power Field-Effect Transistor, Littelfuse Inc IXFX64N60Q3 vs IXFX64N60P3
IXFX64N60P3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation IXFX64N60Q3 vs IXFX64N60P3
Part Number Description Manufacturer Compare
IXFK64N60P Power Field-Effect Transistor, 64A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN IXYS Corporation IXFX64N60Q3 vs IXFK64N60P
IXFK64N60P3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 IXYS Corporation IXFX64N60Q3 vs IXFK64N60P3
IXFX64N60P Power Field-Effect Transistor, 64A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN Littelfuse Inc IXFX64N60Q3 vs IXFX64N60P
IXFX64N60P3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation IXFX64N60Q3 vs IXFX64N60P3
IXFK64N60P3 Power Field-Effect Transistor, Littelfuse Inc IXFX64N60Q3 vs IXFK64N60P3
APT66M60L Power Field-Effect Transistor, 70A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc IXFX64N60Q3 vs APT66M60L
IXFB70N60Q2 Power Field-Effect Transistor, 70A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS-264, 3 PIN Littelfuse Inc IXFX64N60Q3 vs IXFB70N60Q2
IXFK64N60Q3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 IXYS Corporation IXFX64N60Q3 vs IXFK64N60Q3
IXFX64N60P3 Power Field-Effect Transistor, Littelfuse Inc IXFX64N60Q3 vs IXFX64N60P3
IXFB70N60Q2 Power Field-Effect Transistor, 70A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS-264, 3 PIN IXYS Corporation IXFX64N60Q3 vs IXFB70N60Q2

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