Datasheets
IXKP20N60C5 by:

Power Field-Effect Transistor, 20A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IXKP20N60C5 by IXYS Corporation

Overview of IXKP20N60C5 by IXYS Corporation

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Part Details for IXKP20N60C5

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IXKP20N60C5 Part Data Attributes

IXKP20N60C5 IXYS Corporation
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IXKP20N60C5 IXYS Corporation Power Field-Effect Transistor, 20A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 435 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXKP20N60C5

This table gives cross-reference parts and alternative options found for IXKP20N60C5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXKP20N60C5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXKP20N60C5 Power Field-Effect Transistor, Littelfuse Inc IXKP20N60C5 vs IXKP20N60C5
IPB60R190C6ATMA1 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IXKP20N60C5 vs IPB60R190C6ATMA1
STP28N65M2 N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220 package STMicroelectronics IXKP20N60C5 vs STP28N65M2
IXKH20N60C5 Power Field-Effect Transistor, 20A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IXKP20N60C5 vs IXKH20N60C5
APT20N60KC3 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AC, 3 PIN Advanced Power Technology IXKP20N60C5 vs APT20N60KC3
SIHH21N65EF-T1-GE3 Power Field-Effect Transistor, 19.8A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4 Vishay Intertechnologies IXKP20N60C5 vs SIHH21N65EF-T1-GE3
IPB60R190C6XT Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IXKP20N60C5 vs IPB60R190C6XT
R6020ENJTL Power Field-Effect Transistor, 20A I(D), 600V, 0.196ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN ROHM Semiconductor IXKP20N60C5 vs R6020ENJTL
STB28N65M2 N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package STMicroelectronics IXKP20N60C5 vs STB28N65M2
TK20E60U TRANSISTOR POWER, FET, FET General Purpose Power Toshiba America Electronic Components IXKP20N60C5 vs TK20E60U

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