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Transistors / Power Field-Effect Transistors / IXTA18P10T
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IXTA18P10T by:

Power Field-Effect Transistor,

Part Details for IXTA18P10T by Littelfuse Inc

Overview of IXTA18P10T by Littelfuse Inc

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Applications Energy and Power Systems Automotive

Price & Stock for IXTA18P10T

Part # Distributor Description Stock Price Buy
DISTI # 03AH1309
Newark Discmsft Pchan-Trench Gate To-263D2/ Tube |Littelfuse IXTA18P10T Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $1.9800
  • 500 $1.7900
  • 1,000 $1.5500
  • 2,500 $1.3900
$1.3900 / $1.9800 Buy Now
DISTI # IXTA18P10T-ND
DigiKey MOSFET P-CH 100V 18A TO263 Min Qty: 300 Lead time: 40 Weeks Container: Tube Temporarily Out of Stock
  • 300 $1.7383
$1.7383 Buy Now

Part Details for IXTA18P10T

IXTA18P10T CAD Models

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IXTA18P10T Part Data Attributes

Parametric Data
IXTA18P10T Littelfuse Inc
Buy Now Datasheet
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IXTA18P10T Littelfuse Inc Power Field-Effect Transistor,
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 80 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA18P10T

This table gives cross-reference parts and alternative options found for IXTA18P10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA18P10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF5NJ9540SCV Power Field-Effect Transistor, 18A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN Infineon Technologies AG IXTA18P10T vs IRF5NJ9540SCV
IXTY18P10T Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 IXYS Corporation IXTA18P10T vs IXTY18P10T
IXTP18P10T Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 IXYS Corporation IXTA18P10T vs IXTP18P10T
IXTA18P10T Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 IXYS Corporation IXTA18P10T vs IXTA18P10T
IXTY18P10T Power Field-Effect Transistor, Littelfuse Inc IXTA18P10T vs IXTY18P10T

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