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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1606
|
Newark | Mosfet, N-Ch, 1Kv, 0.4A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:400Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTP01N100D RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 205 |
|
$3.5800 / $4.7700 | Buy Now |
DISTI #
IXTP01N100D-ND
|
DigiKey | MOSFET N-CH 1000V 400MA TO220AB Min Qty: 1 Lead time: 57 Weeks Container: Tube |
198 In Stock |
|
$3.9061 / $8.2200 | Buy Now |
|
LCSC | TO-220-3 MOSFETs ROHS | 1 |
|
$4.9908 / $5.3125 | Buy Now |
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IXTP01N100D
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTP01N100D
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Drain Current-Max (ID) | 0.4 A | |
Drain-source On Resistance-Max | 80 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.1 W | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 0.4 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTP01N100D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP01N100D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTU01N100D | Power Field-Effect Transistor, | Littelfuse Inc | IXTP01N100D vs IXTU01N100D |
IXTY01N100D | Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | IXYS Corporation | IXTP01N100D vs IXTY01N100D |
IXTP01N100D | Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD, TO-220AD, 3 PIN | IXYS Corporation | IXTP01N100D vs IXTP01N100D |
IXTU01N100D | Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN | IXYS Corporation | IXTP01N100D vs IXTU01N100D |
IXTY01N100D | Power Field-Effect Transistor, | Littelfuse Inc | IXTP01N100D vs IXTY01N100D |