Part Details for IXTT40N50L2 by Littelfuse Inc
Overview of IXTT40N50L2 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTT40N50L2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1841
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Newark | Disc Mosfet N-Ch Linear L2 To-268Aa/ Tube |Littelfuse IXTT40N50L2 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$12.7800 / $13.7500 | Buy Now |
Part Details for IXTT40N50L2
IXTT40N50L2 CAD Models
IXTT40N50L2 Part Data Attributes
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IXTT40N50L2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTT40N50L2
Littelfuse Inc
Power Field-Effect Transistor,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.17 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-268AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 540 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for IXTT40N50L2
This table gives cross-reference parts and alternative options found for IXTT40N50L2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTT40N50L2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTQ40N50L2 | Power Field-Effect Transistor, 40A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXYS Corporation | IXTT40N50L2 vs IXTQ40N50L2 |
IXTQ40N50L2 | Power Field-Effect Transistor, | Littelfuse Inc | IXTT40N50L2 vs IXTQ40N50L2 |
IXTT40N50L2 | Power Field-Effect Transistor, 40A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTT40N50L2 vs IXTT40N50L2 |
IXTH40N50L2 | Power Field-Effect Transistor, 40A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | IXTT40N50L2 vs IXTH40N50L2 |
IXTH40N50L2 | Power Field-Effect Transistor, | Littelfuse Inc | IXTT40N50L2 vs IXTH40N50L2 |