Part Details for JAN1N5809X by Microsemi Corporation
Overview of JAN1N5809X by Microsemi Corporation
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Part Details for JAN1N5809X
JAN1N5809X CAD Models
JAN1N5809X Part Data Attributes
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JAN1N5809X
Microsemi Corporation
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Datasheet
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JAN1N5809X
Microsemi Corporation
Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon,
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | O-LALF-W2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Application | FAST RECOVERY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
JESD-30 Code | O-LALF-W2 | |
JESD-609 Code | e0 | |
Non-rep Pk Forward Current-Max | 125 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Output Current-Max | 6 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Qualification Status | Not Qualified | |
Reverse Recovery Time-Max | 0.03 µs | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |