JAN2N5660
Description: Power Bipolar Transistor, 2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin,

Overview of JAN2N5660 by Defense Logistics Agency

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Part Data Attributes for JAN2N5660 by Defense Logistics Agency

JAN2N5660
Defense Logistics Agency
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
COLLECTOR
Collector Current-Max (IC)
2 A
Collector-Emitter Voltage-Max
200 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
40
JEDEC-95 Code
TO-66
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Qualification Status
Qualified
Reference Standard
MIL-19500/454E
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Element Material
SILICON
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  1. JAN2N5660
    Defense Logistics Agency
    Power Bipolar Transistor, 2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin,
    VS

Alternate Parts for JAN2N5660

This table gives cross-reference parts and alternative options found for JAN2N5660. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N5660, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTX2N5660 Power Bipolar Transistor, 2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, Defense Logistics Agency JAN2N5660 vs JANTX2N5660
Part Number Description Manufacturer Compare
BD241 3A, 45V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN JW Miller JAN2N5660 vs BD241
TIP120 Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Samsung Semiconductor JAN2N5660 vs TIP120
TIP120 Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-220, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN Microsemi Corporation JAN2N5660 vs TIP120
JANTX2N5660 Power Bipolar Transistor, 2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, Defense Logistics Agency JAN2N5660 vs JANTX2N5660
JAN2N5660 Power Bipolar Transistor, 2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-213, Metal, 2 Pin Silicon Transistor Corporation JAN2N5660 vs JAN2N5660
TIP111 Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Samsung Semiconductor JAN2N5660 vs TIP111
TIP110 Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Fairchild Semiconductor Corporation JAN2N5660 vs TIP110
TIP120TU NPN Epitaxial Darlington Transistor, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL Fairchild Semiconductor Corporation JAN2N5660 vs TIP120TU
TIP111TU 2A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC JAN2N5660 vs TIP111TU
JANTXV2N5660 Power Bipolar Transistor, 2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, Defense Logistics Agency JAN2N5660 vs JANTXV2N5660

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